No. |
Part Name |
Description |
Manufacturer |
1 |
2N5400 |
Amplifier transistor. Collector-emitter voltage: Vceo = -120V. Collector-base voltage: Vcbo = -130V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
2 |
2SA992 |
Audio frequency low noise amplifier. Collector-base voltage: Vcbo = -120V. Collector-emitter voltage: Vceo = -120V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 500mW. |
USHA India LTD |
3 |
2SA992 |
Audio frequency low noise amplifier. Collector-base voltage: Vcbo = -120V. Collector-emitter voltage: Vceo = -120V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 500mW. |
USHA India LTD |
4 |
MJ11011 |
POWER TRANSISTORS(30A,60-120V,200W) |
MOSPEC Semiconductor |
5 |
MJ11012 |
POWER TRANSISTORS(30A,60-120V,200W) |
MOSPEC Semiconductor |
6 |
MJ11013 |
POWER TRANSISTORS(30A,60-120V,200W) |
MOSPEC Semiconductor |
7 |
MJ11014 |
POWER TRANSISTORS(30A,60-120V,200W) |
MOSPEC Semiconductor |
8 |
MJ11015 |
POWER TRANSISTORS(30A,60-120V,200W) |
MOSPEC Semiconductor |
9 |
MJ11016 |
POWER TRANSISTORS(30A,60-120V,200W) |
MOSPEC Semiconductor |
10 |
MJ11028 |
POWER TRANSISTOR(50A,60-120V,300W) |
MOSPEC Semiconductor |
11 |
MJ11029 |
POWER TRANSISTOR(50A,60-120V,300W) |
MOSPEC Semiconductor |
12 |
MJ11030 |
POWER TRANSISTOR(50A,60-120V,300W) |
MOSPEC Semiconductor |
13 |
MJ11031 |
POWER TRANSISTOR(50A,60-120V,300W) |
MOSPEC Semiconductor |
14 |
MJ11032 |
POWER TRANSISTOR(50A,60-120V,300W) |
MOSPEC Semiconductor |
15 |
MJ11033 |
POWER TRANSISTOR(50A,60-120V,300W) |
MOSPEC Semiconductor |
16 |
RCA9116D |
Silicon P-N-P epitaxial-base high-power transistor. -120V, 200W. |
General Electric Solid State |
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