| No. |
Part Name |
Description |
Manufacturer |
| 1 |
27C210-12FA |
0.6-7 V, 1 MEG CMOS EPROM (64Kx16) |
Philips |
| 2 |
27C256-12FA |
2-7 V, 256K-bit CMOS EPROM (32Kx8) |
Philips |
| 3 |
27C64A-12FA |
64K-bit CMOS EPROM(8K x 8) |
Philips |
| 4 |
AP7340-12FS4-7 |
150mA HIGH PSRR LOW NOISE LDO WITH ENABLE |
Diodes |
| 5 |
AP7340D-12FS4-7 |
150mA HIGH PSRR LOW NOISE LDO WITH ENABLE |
Diodes |
| 6 |
AP7341-12FS4-7 |
300mA HIGH PSRR LOW NOISE LDO WITH ENABLE |
Diodes |
| 7 |
AP7341D-12FS4-7 |
300mA HIGH PSRR LOW NOISE LDO WITH ENABLE |
Diodes |
| 8 |
AP7361-12FGE-7 |
1A, Low Dropout Adjustable and Fixed-Mode Regulator with Enable |
Diodes |
| 9 |
AT28C010-12FM/883 |
1 Megabit 128K x 8 Paged CMOS E2PROM |
Atmel |
| 10 |
AT28HC256-12FM/883 |
256 32K x 8 High Speed CMOS E2PROM |
Atmel |
| 11 |
AT28HC256E-12FM/883 |
256 32K x 8 High Speed CMOS E2PROM |
Atmel |
| 12 |
AT28HC256F-12FM/883 |
256 32K x 8 High Speed CMOS E2PROM |
Atmel |
| 13 |
CM100DU-12F |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| 14 |
CM100DU-12F |
Trench Gate Design Dual IGBTMOD�� 100 Amperes/600 Volts |
Powerex Power Semiconductors |
| 15 |
CM100DUS-12F |
HIGH POWER SWITCHING USE |
Mitsubishi Electric Corporation |
| 16 |
CM100E3U-12F |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| 17 |
CM100TJ-12F |
Trench Gate Design 100 Amperes/600 Volts |
Powerex Power Semiconductors |
| 18 |
CM100TU-12F |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE |
Mitsubishi Electric Corporation |
| 19 |
CM100TU-12F |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| 20 |
CM100TU-12F |
Trench Gate Design Six IGBTMOD�� 100 Amperes/600 Volts |
Powerex Power Semiconductors |
| 21 |
CM150DU-12F |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| 22 |
CM150DU-12F |
Trench Gate Design Dual IGBTMOD�� 150 Amperes/600 Volts |
Powerex Power Semiconductors |
| 23 |
CM150E3U-12F |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| 24 |
CM150TJ-12F |
Trench Gate Design Six IGBTMOD�� 150 Amperes/600 Volts |
Powerex Power Semiconductors |
| 25 |
CM150TU-12F |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| 26 |
CM150TU-12F |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE |
Mitsubishi Electric Corporation |
| 27 |
CM150TU-12F |
Trench Gate Design Six IGBTMOD�� 150 Amperes/600 Volts |
Powerex Power Semiconductors |
| 28 |
CM200DU-12F |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| 29 |
CM200DU-12F |
Trench Gate Design Dual IGBTMOD�� 200 Amperes/600 Volts |
Powerex Power Semiconductors |
| 30 |
CM200TU-12F |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE |
Mitsubishi Electric Corporation |
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