No. |
Part Name |
Description |
Manufacturer |
1 |
1214GN-180LV |
GaN Transistors |
Microsemi |
2 |
1504-180C |
Delay 180 +/-9 ns, Fixed dip delay line Td/Tr=5 |
Data Delay Devices Inc |
3 |
1504-180E |
Delay 180 +/-9 ns, Fixed dip delay line Td/Tr=5 |
Data Delay Devices Inc |
4 |
1504-360E |
Delay 360 +/-18 ns, Fixed dip delay line Td/Tr=5 |
Data Delay Devices Inc |
5 |
1504-360F |
Delay 360 +/-18 ns, Fixed dip delay line Td/Tr=5 |
Data Delay Devices Inc |
6 |
1504-375D |
Delay 375 +/-18.8 ns, Fixed dip delay line Td/Tr=5 |
Data Delay Devices Inc |
7 |
1517-180E |
5-TAP DIP DELAY LINE |
Data Delay Devices Inc |
8 |
1517-180F |
5-TAP DIP DELAY LINE |
Data Delay Devices Inc |
9 |
1519-180C |
10-TAP DIP DELAY LINE TD/TR = 5 |
Data Delay Devices Inc |
10 |
1519-180E |
10-TAP DIP DELAY LINE TD/TR = 5 |
Data Delay Devices Inc |
11 |
1617AM10 |
10 W, 18 V, 1500-1800 MHz common emitter transistor |
GHz Technology |
12 |
1618-35 |
35 W, 28 V, 1600-1800 MHz common base transistor |
GHz Technology |
13 |
1718-32L |
32 W, 24 V, 1750-1850 MHz common base transistor |
GHz Technology |
14 |
1719-35 |
35 W, 28 V, 1725-1850 MHz common base transistor |
GHz Technology |
15 |
1819-35 |
35 W, 28 V, 1750-1850 MHz common base transistor |
GHz Technology |
16 |
1819AB12 |
12 W, 25 V, 1808-1880 MHz common emitter transistor |
GHz Technology |
17 |
1819AB25 |
25 W, 25 V, 1808-1880 MHz common emitter transistor |
GHz Technology |
18 |
1819AB35 |
35 W, 25 V, 1808-1880 MHz common emitter transistor |
GHz Technology |
19 |
1819AB4 |
4 W, 25 V, 1808-1880 MHz common emitter transistor |
GHz Technology |
20 |
1922-18 |
1.9-2.2GHz 18W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
21 |
1MBI800PN-180 |
Low loss high speed switching IGBT Modules |
Fuji Electric |
22 |
1N2927 |
Diode 0.0005A 3-Pin TO-18 |
New Jersey Semiconductor |
23 |
1N2928 |
Diode 0.0025A 3-Pin TO-18 |
New Jersey Semiconductor |
24 |
1N2928A |
Diode 0.0025A 3-Pin TO-18 |
New Jersey Semiconductor |
25 |
1N2929 |
Diode 0.005A 3-Pin TO-18 |
New Jersey Semiconductor |
26 |
1N2929A |
Diode 0.005A 3-Pin TO-18 |
New Jersey Semiconductor |
27 |
1N2930 |
Diode 0.015A 3-Pin TO-18 |
New Jersey Semiconductor |
28 |
1N2930A |
Diode 0.015A 3-Pin TO-18 |
New Jersey Semiconductor |
29 |
1N2931 |
Diode 0.025A 3-Pin TO-18 |
New Jersey Semiconductor |
30 |
1N2931A |
Diode 0.025A 3-Pin TO-18 |
New Jersey Semiconductor |
| | | |