| No. |
Part Name |
Description |
Manufacturer |
| 1 |
5082-2900 |
Schottky Barrier Diodes for General Purpose Applications |
Agilent (Hewlett-Packard) |
| 2 |
HM77-29006 |
Low Profile Surface Mount Inductors |
BI Technologies |
| 3 |
MA02305AK-R7 |
2000-2900 MHz, 3V, 100mW RF power amplifier IC for bluetooth |
MA-Com |
| 4 |
MA02305AK-SMB |
2000-2900 MHz, 3V, 100mW RF power amplifier IC for bluetooth |
MA-Com |
| 5 |
MAXQ610J-2900+ |
16-Bit Microcontroller with Infrared Module |
MAXIM - Dallas Semiconductor |
| 6 |
MAXQ610J-2900+T |
16-Bit Microcontroller with Infrared Module |
MAXIM - Dallas Semiconductor |
| 7 |
PH2729-110M |
2700-2900 MHz, 110 W,100 ms, radar pulsed power transistor |
MA-Com |
| 8 |
PH2729-130M |
2700-2900 MHz, 130 W,100 ms, radar pulsed power transistor |
MA-Com |
| 9 |
PH2729-150M |
2700-2900 MHz,150 Watt, radar pulsed power transistor |
MA-Com |
| 10 |
PH2729-25M |
2700-2900 MHz, 25 W,100 ms, radar pulsed power transistor |
MA-Com |
| 11 |
PH2729-65M |
2700-2900 MHz, 65 W,100 ms, radar pulsed power transistor |
MA-Com |
| 12 |
PH2729-8.5M |
2700-2900 MHz, 8.5 W,100 ms, radar pulsed power transistor |
MA-Com |
| 13 |
S-2900-CA |
CMOS 512-bit parallel E2PROM |
Epson Company |
| 14 |
S-2900-DP |
CMOS 512-bit parallel E2PROM |
Epson Company |
| 15 |
S-2900-FE |
CMOS 512-bit parallel E2PROM |
Epson Company |
| 16 |
S-2900-UP |
CMOS 512-bit parallel E2PROM |
Epson Company |
| 17 |
S-2900A |
CMOS 512-bit SERIAL EEPROM |
Seiko Instruments Inc |
| 18 |
S-2900ACA |
CMOS 512-bit SERIAL EEPROM |
Seiko Instruments Inc |
| 19 |
S-2900ADP |
CMOS 512-bit SERIAL EEPROM |
Seiko Instruments Inc |
| 20 |
S-2900AFE |
CMOS 512-bit SERIAL EEPROM |
Seiko Instruments Inc |
| 21 |
S-2900AUP |
CMOS 512-bit SERIAL EEPROM |
Seiko Instruments Inc |
| 22 |
SK-2900 SERIES |
CRYSTAL CLOCK OSCILLATORS |
NEL Frequency Controls |
| | | |
