No. |
Part Name |
Description |
Manufacturer |
1 |
1503J-30E |
Max delay 30 ns, Mechanically variable delay line |
Data Delay Devices Inc |
2 |
1504-30E |
Delay 30 +/-1.5 ns, Fixed dip delay line Td/Tr=5 |
Data Delay Devices Inc |
3 |
1517-30E |
5-TAP DIP DELAY LINE |
Data Delay Devices Inc |
4 |
1519-30E |
10-TAP DIP DELAY LINE TD/TR = 5 |
Data Delay Devices Inc |
5 |
ABC900-30E |
Linear Power Amplifier 30W 890-960MHz, specifically designed for cellular radio base station applications |
Motorola |
6 |
AS5C512K8DJ-30E_883C |
512K x 8 SRAM - high speed with revolutionary pinout |
Austin Semiconductor |
7 |
AS5C512K8DJ-30E_IT |
512K x 8 SRAM - high speed with revolutionary pinout |
Austin Semiconductor |
8 |
AS5C512K8DJ-30E_XT |
512K x 8 SRAM - high speed with revolutionary pinout |
Austin Semiconductor |
9 |
AS5C512K8EC-30E_883C |
512K x 8 SRAM - high speed with revolutionary pinout |
Austin Semiconductor |
10 |
AS5C512K8EC-30E_XT |
512K x 8 SRAM - high speed with revolutionary pinout |
Austin Semiconductor |
11 |
AS5C512K8ECJ-30E_883C |
512K x 8 SRAM - high speed with revolutionary pinout |
Austin Semiconductor |
12 |
AS5C512K8ECJ-30E_IT |
512K x 8 SRAM - high speed with revolutionary pinout |
Austin Semiconductor |
13 |
AS5C512K8ECJ-30E_XT |
512K x 8 SRAM - high speed with revolutionary pinout |
Austin Semiconductor |
14 |
AS5C512K8F-30E_883C |
512K x 8 SRAM - high speed with revolutionary pinout |
Austin Semiconductor |
15 |
AS5C512K8F-30E_IT |
512K x 8 SRAM - high speed with revolutionary pinout |
Austin Semiconductor |
16 |
AS5C512K8F-30E_XT |
512K x 8 SRAM - high speed with revolutionary pinout |
Austin Semiconductor |
17 |
BUK6D22-30E |
30 V, N-channel Trench MOSFET |
Nexperia |
18 |
BUK6D38-30E |
30 V, N-channel Trench MOSFET |
Nexperia |
19 |
BUK6D72-30E |
30 V, N-channel Trench MOSFET |
Nexperia |
20 |
BUK751R6-30E |
N-channel TrenchMOS standard level FET |
NXP Semiconductors |
21 |
BUK761R3-30E |
N-channel TrenchMOS standard level FET |
NXP Semiconductors |
22 |
BUK761R4-30E |
N-channel TrenchMOS standard level FET |
NXP Semiconductors |
23 |
BUK7E1R6-30E |
N-channel TrenchMOS standard level FET |
NXP Semiconductors |
24 |
BUK7K5R1-30E |
Dual N-channel 30 V, 5.1 mΩ standard level MOSFET |
Nexperia |
25 |
BUK7K5R1-30E |
Dual N-channel 30 V, 5.1 mΩ standard level MOSFET |
NXP Semiconductors |
26 |
BUK7K5R6-30E |
Dual N-channel 30 V, 5.1 mΩ standard level MOSFET |
Nexperia |
27 |
BUK7K5R6-30E |
Dual N-channel 30 V, 5.6 mΩ standard level MOSFET |
NXP Semiconductors |
28 |
BUK951R6-30E |
N-channel TrenchMOS logic level FET |
NXP Semiconductors |
29 |
BUK961R4-30E |
N-channel TrenchMOS logic level FET |
NXP Semiconductors |
30 |
BUK961R5-30E |
N-channel TrenchMOS logic level FET |
NXP Semiconductors |
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