| No. |
Part Name |
Description |
Manufacturer |
| 1 |
0405-100 |
Gold metallized silicon NPN pulse power transistor, 420-450MHz 100W |
SGS Thomson Microelectronics |
| 2 |
0405-30 |
Gold metallized silicon NPN pulse power transistor, 420-450MHz 30W |
SGS Thomson Microelectronics |
| 3 |
0912-45 |
45 W, 50 V internally matched, common base transistor |
Acrian |
| 4 |
0912-45 |
RF Power Transistors: AVIONICS |
Advanced Power Technology |
| 5 |
0912-45 |
45 W, 50 V, 960-1215 MHz common base transistor |
GHz Technology |
| 6 |
0912-45 |
Pulsed Power Avionics 960-1215 MHz (Si) |
Microsemi |
| 7 |
0912-45-2 |
45 W, 50 V internally matched, common base transistor |
Acrian |
| 8 |
0912-45-3 |
45 W, 50 V internally matched, common base transistor |
Acrian |
| 9 |
1504-450E |
Delay 450 +/-22.5 ns, Fixed dip delay line Td/Tr=5 |
Data Delay Devices Inc |
| 10 |
1504-450G |
Delay 450 +/-22.5 ns, Fixed dip delay line Td/Tr=5 |
Data Delay Devices Inc |
| 11 |
1504-45A |
Delay 45 +/-2.3 ns, Fixed dip delay line Td/Tr=5 |
Data Delay Devices Inc |
| 12 |
1511-8 |
Gold metallized silicon NPN power transistor designed for CW and pulsed radar applications 400-450MHz |
SGS Thomson Microelectronics |
| 13 |
1513-45Y |
Delay 45 +/-2.3 ns, fixed SIP delay line Td/Tr=5 |
Data Delay Devices Inc |
| 14 |
1514-45G |
Delay 45 +/-2.3 ns, fixed SIP delay line Td/Tr=5 |
Data Delay Devices Inc |
| 15 |
1514-45Y |
Delay 45 +/-2.3 ns, fixed SIP delay line Td/Tr=5 |
Data Delay Devices Inc |
| 16 |
1519-450E |
10-TAP DIP DELAY LINE TD/TR = 5 |
Data Delay Devices Inc |
| 17 |
1519-450G |
10-TAP DIP DELAY LINE TD/TR = 5 |
Data Delay Devices Inc |
| 18 |
1519-45A |
10-TAP DIP DELAY LINE TD/TR = 5 |
Data Delay Devices Inc |
| 19 |
27HC641-45A |
64K BIT CMOS EPROM (8K X 8) |
Philips |
| 20 |
27HC641-45FA |
64K BIT CMOS EPROM (8K X 8) |
Philips |
| 21 |
27HC641-45N |
64K BIT CMOS EPROM (8K X 8) |
Philips |
| 22 |
2N5783 |
Silicon P-N-P epitaxial-base transistor. -45V, 10W. |
General Electric Solid State |
| 23 |
2N6124 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -45V. |
General Electric Solid State |
| 24 |
2SA539 |
Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 400mW. |
USHA India LTD |
| 25 |
2SJ448(JM) |
Pch vertical DMOSFET MP-45F |
NEC |
| 26 |
2SJ449(JM) |
Pch vertical DMOS FET MP-45F |
NEC |
| 27 |
2SK2723(JM) |
Nch power MOSFET MP-45F high-speed switching |
NEC |
| 28 |
2SK3053(JM) |
Nch power MOS FET MP-45F high-current switching |
NEC |
| 29 |
2SK3058-Z |
Nch power MOS FET MP-45F high-speed switching |
NEC |
| 30 |
3135-45 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
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