No. |
Part Name |
Description |
Manufacturer |
1 |
2N5783 |
Silicon P-N-P epitaxial-base transistor. -45V, 10W. |
General Electric Solid State |
2 |
2N6124 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -45V. |
General Electric Solid State |
3 |
2SA539 |
Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 400mW. |
USHA India LTD |
4 |
AT27C1024-45VC |
1-Megabit 64K x 16 OTP EPROM |
Atmel |
5 |
AT27C1024-45VI |
1-Megabit 64K x 16 OTP EPROM |
Atmel |
6 |
AT27C516-45VC |
512K 32K x 16 OTP CMOS EPROM |
Atmel |
7 |
AT27C516-45VI |
512K 32K x 16 OTP CMOS EPROM |
Atmel |
8 |
AT27LV1026-45VC |
1-Megabit 2 x 32K x 16 16-Bit Interleaved Low-Voltage OTP EPROM |
Atmel |
9 |
AT27LV1026-45VI |
1-Megabit 2 x 32K x 16 16-Bit Interleaved Low-Voltage OTP EPROM |
Atmel |
10 |
AT49F1024-45VC |
1-Megabit 64K x 16 5-volt Only Flash Memory |
Atmel |
11 |
AT49F1025-45VC |
1-Megabit 64K x 16 5-volt Only Flash Memory |
Atmel |
12 |
AT49LV1024A-45VC |
1-megabit (64K x 16) 3-volt Only Flash Memory |
Atmel |
13 |
AT49LV1024A-45VL |
1-megabit (64K x 16) 3-volt Only Flash Memory |
Atmel |
14 |
BC307 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
15 |
BC327 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 625mW. Collector current Ic = -800mA. |
USHA India LTD |
16 |
BC557 |
Transistor. Switching and AF amplifier. High voltage. Low noise. Vcbo = -50V, Vceo= -45V, Vebo = -5V, Pc = 500mW, Ic = -100mA. |
USHA India LTD |
17 |
BC560 |
Transistor. Switching and AF amplifier. High voltage. Low noise. Vcbo = -50V, Vceo= -45V, Vebo = -5V, Pc = 500mW, Ic = -100mA. |
USHA India LTD |
18 |
BC636 |
Transistor. Switching and amplifier applications. Vcer = -45V, Vces = -45V, Vceo= -45V, Vebo = -5V, Pc = 1W, Ic = -1A. |
USHA India LTD |
19 |
BC636 |
Transistor. Switching and amplifier applications. Vcer = -45V, Vces = -45V, Vceo= -45V, Vebo = -5V, Pc = 1W, Ic = -1A. |
USHA India LTD |
20 |
BC636 |
Transistor. Switching and amplifier applications. Vcer = -45V, Vces = -45V, Vceo= -45V, Vebo = -5V, Pc = 1W, Ic = -1A. |
USHA India LTD |
21 |
BC857AW-G |
Small Signal Transistor, VCBO=-50V, VCEO=-45V, VEBO=-5V, IC=-0.1A |
Comchip Technology |
22 |
BC857BW-G |
Small Signal Transistor, VCBO=-50V, VCEO=-45V, VEBO=-5V, IC=-0.1A |
Comchip Technology |
23 |
BC857CW-G |
Small Signal Transistor, VCBO=-50V, VCEO=-45V, VEBO=-5V, IC=-0.1A |
Comchip Technology |
24 |
BD534 |
Epitaxial-base silicon P-N-P VERSAWATT transistor. -45V, 50W. |
General Electric Solid State |
25 |
BD796 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -45V, 65W. |
General Electric Solid State |
26 |
BTS4141D |
Smart High Side Switches - 1x 200m�, 12-45V P-TO-252 |
Infineon |
27 |
BTS4141N |
Smart High Side Switches - 1x 200m�, Vbb12-45V, SOT223 |
Infineon |
28 |
BTS4142N |
Smart High Side Switches - 1x200m�, Vbb 12-45V, SOT 223 |
Infineon |
29 |
BTS4880-R |
Smart High Side Switches - 8 x 200 mΩ, 12-45V |
Infineon |
30 |
CY7C167A-45VC |
16K x 1 Static RAM |
Cypress |
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