| No. |
Part Name |
Description |
Manufacturer |
| 1 |
B4150CK5-5.8 |
5.8V 150mA CMOS low dropout LDO |
BayLinear |
| 2 |
B4151CK5-5.8 |
5.8V 150mA CMOS low dropout LDO |
BayLinear |
| 3 |
B4250CK3-5.8 |
5.8V 250mA CMOS low dropout LDO |
BayLinear |
| 4 |
B4250CR-5.8 |
5.8V 250mA CMOS low dropout LDO |
BayLinear |
| 5 |
B4251CK-5.8 |
5.8V 250mA low dropout regulator |
BayLinear |
| 6 |
B4251CK5-5.8 |
5.8V 250mA low dropout regulator |
BayLinear |
| 7 |
B4252CK5-5.8 |
5.8V 250mA low dropout voltage regulator |
BayLinear |
| 8 |
B4300CN-5.8 |
5.8V 300mA CMOS low dropout LDO |
BayLinear |
| 9 |
B4300CR-5.8 |
5.8V 300mA CMOS low dropout LDO |
BayLinear |
| 10 |
B4500CN-5.8 |
5.8V 500mA low dropout voltage regulator |
BayLinear |
| 11 |
B4500CR-5.8 |
5.8V 500mA low dropout voltage regulator |
BayLinear |
| 12 |
B4600CN-5.8 |
5.8V 600mA low dropout voltage regulator |
BayLinear |
| 13 |
B4600CR-5.8 |
5.8V 600mA low dropout voltage regulator |
BayLinear |
| 14 |
B8220K6-5.8 |
5.8V 1Amp surface mount zero bias schottky detector diode |
BayLinear |
| 15 |
B8390K6-5.8 |
5.8V surface mount RF PIN switch diode |
BayLinear |
| 16 |
B850XK6-5.8 |
5.8V surface mount zero bias schottky detector diode |
BayLinear |
| 17 |
MGFC36V5258 |
5.2-5.8 GHz BAND 4W Internally Matched GaAs FET |
Mitsubishi Electric Corporation |
| 18 |
MGFC39V5258 |
5.2-5.8 GHz BAND 8W INTERNALLY MATCHED GaAs FET |
Mitsubishi Electric Corporation |
| 19 |
MGFC39V5258A |
5.2-5.8 GHz band 8W internally matched GaAs FET |
Mitsubishi Electric Corporation |
| 20 |
MGFC42V5258 |
5.2-5.8 GHz Band 16W Internally Matched GaAs FET |
Mitsubishi Electric Corporation |
| 21 |
MGFC42V5258A |
5.2-5.8GHz band 16W internally matched GaAs FET |
Mitsubishi Electric Corporation |
| 22 |
NEZ5258-15B |
5.2-5.8 GHz, 15 W, C-band power GaAs MESFET |
NEC |
| 23 |
NEZ5258-15BD |
5.2-5.8 GHz, 15 W, C-band power GaAs MESFET |
NEC |
| 24 |
NEZ5258-4B |
5.2-5.8 GHz, 4 W, C-band power GaAs MESFET |
NEC |
| 25 |
NEZ5258-8B |
5.2-5.8 GHz, 8 W, C-band power GaAs MESFET |
NEC |
| 26 |
NEZ5258-8BD |
5.2-5.8 GHz, 8 W, C-band power GaAs MESFET |
NEC |
| 27 |
NTGS3136P |
-20V, -5.8A, Single P-Channel, TSOP-6 |
ON Semiconductor |
| 28 |
PRFS-P5022-005 |
5.15-5.85 GHz U-NII Power Amplifier |
Anadigics Inc |
| 29 |
PRFS-P5022-006 |
5.15-5.85 GHz U-NII Power Amplifier |
Anadigics Inc |
| 30 |
PRFS-P5022-007 |
5.15-5.85 GHz U-NII Power Amplifier |
Anadigics Inc |
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