| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1S315 |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 2 |
1S315H |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 3 |
2729GN-500V |
|
Microsemi |
| 4 |
IXTH12N45 |
12 AMPS/ 450-500V/ 0.4OM/0.5OM |
IXYS Corporation |
| 5 |
IXTH12N50 |
12 AMPS/ 450-500V/ 0.4OM/0.5OM |
IXYS Corporation |
| 6 |
IXTM12N45 |
12 AMPS/ 450-500V/ 0.4OM/0.5OM |
IXYS Corporation |
| 7 |
IXTM12N50 |
12 AMPS/ 450-500V/ 0.4OM/0.5OM |
IXYS Corporation |
| 8 |
MJ10008 |
POWER TRANSISTORS(20A,400-500V,175W) |
MOSPEC Semiconductor |
| 9 |
MJ10009 |
POWER TRANSISTORS(20A,400-500V,175W) |
MOSPEC Semiconductor |
| 10 |
MJ10015 |
POWER TRANSISTORS(50A,400-500V,250W) |
MOSPEC Semiconductor |
| 11 |
MJ10016 |
POWER TRANSISTORS(50A,400-500V,250W) |
MOSPEC Semiconductor |
| | | |
