| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1S310 |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 2 |
1S310H |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 3 |
2N5086 |
Amplifier transistor. Collector-emitter voltage: Vceo = -50V. Collector-base voltage: Vcbo = -50V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 4 |
2N5086 |
Amplifier transistor. Collector-emitter voltage: Vceo = -50V. Collector-base voltage: Vcbo = -50V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 5 |
2N5087 |
Amplifier transistor. Collector-emitter voltage: Vceo = -50V. Collector-base voltage: Vcbo = -50V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 6 |
2N5087 |
Amplifier transistor. Collector-emitter voltage: Vceo = -50V. Collector-base voltage: Vcbo = -50V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 7 |
2N5956 |
Silicon P-N-P medium-power transistor. -50V, 40W. |
General Electric Solid State |
| 8 |
2N6469 |
Epitaxial-base, silicon P-N-P high-power transistor. -50V, 125W. |
General Electric Solid State |
| 9 |
2N6489 |
15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -50V. |
General Electric Solid State |
| 10 |
2SA1015 |
Low frequency amplifier. Collector-base voltage: Vcbo = -50V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -5V.Collector dissipation: Pc(max) = 400mW. |
USHA India LTD |
| 11 |
2SA1015 |
Low frequency amplifier. Collector-base voltage: Vcbo = -50V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -5V.Collector dissipation: Pc(max) = 400mW. |
USHA India LTD |
| 12 |
2SA1235A |
200mW SMD PNP transistor, maximum rating: -50V Vceo, -200mA Ic, 150 to 500 hFE. Improve on 2SA1235 |
Isahaya Electronics Corporation |
| 13 |
2SA1366 |
150mW SMD PNP transistor, maximum rating: -50V Vceo, -400mA Ic, 90 to 500 hFE. Complementary 2SC3441 |
Isahaya Electronics Corporation |
| 14 |
2SA1576UBHZG |
PNP -50V -150mA General Purpose Transistor |
ROHM |
| 15 |
2SA1576UBHZGTL |
PNP -50V -150mA General Purpose Transistor |
ROHM |
| 16 |
2SA1774EBHZG |
PNP -50V -150mA General Purpose Transistor |
ROHM |
| 17 |
2SA1774EBHZGTL |
PNP -50V -150mA General Purpose Transistor |
ROHM |
| 18 |
2SA1995 |
450mW Lead frame PNP transistor, maximum rating: -50V Vceo, -100mA Ic, 120 to 560 hFE. |
Isahaya Electronics Corporation |
| 19 |
2SA2126 |
Bipolar Transistor -50V -3A VCE(sat);-270mV max. PNP Single TP/TP-FA |
ON Semiconductor |
| 20 |
2SA537 |
Silicon PNP Epitaxial Planar Transistor Vcbo=-60V, Vceo=-50V, intended for use in HiFi Amp. Driver, Power Output |
Hitachi Semiconductor |
| 21 |
2SA733 |
Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 250mW. |
USHA India LTD |
| 22 |
2SAR513P5 |
PNP -50V -1A Medium Power Transistor |
ROHM |
| 23 |
2SAR513P5T100 |
PNP -50V -1A Medium Power Transistor |
ROHM |
| 24 |
2SAR533P5 |
PNP -50V -3A Medium Power Transistor |
ROHM |
| 25 |
2SAR533P5T100 |
PNP -50V -3A Medium Power Transistor |
ROHM |
| 26 |
2SAR553P5 |
PNP -50V -2A Medium Power Transistor |
ROHM |
| 27 |
2SAR553P5T100 |
PNP -50V -2A Medium Power Transistor |
ROHM |
| 28 |
2SAR554P5 |
PNP -50V -2A Medium Power Transistor |
ROHM |
| 29 |
2SAR554P5T100 |
PNP -50V -2A Medium Power Transistor |
ROHM |
| 30 |
2SB1116 |
Audio frequency power amplifier medium speed switching. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -6V. Collector dissipation: Pc(max) = 0,75W. |
USHA India LTD |
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