| No. |
Part Name |
Description |
Manufacturer |
| 1 |
HMN1288J-55I |
Non-Volatile SRAM MODULE 1Mbit (128K x 8-Bit),34Pin-JLCC, 5V |
etc |
| 2 |
HY29F040AC-55I |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 55ns |
Hynix Semiconductor |
| 3 |
HY29F040AP-55I |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 55ns |
Hynix Semiconductor |
| 4 |
HY29F040AR-55I |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 55ns |
Hynix Semiconductor |
| 5 |
HY29F040AT-55I |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 55ns |
Hynix Semiconductor |
| 6 |
HY29LV800B-55I |
8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory |
Hynix Semiconductor |
| 7 |
HY29LV800T-55I |
8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory |
Hynix Semiconductor |
| 8 |
HY57V161610DTC-55I |
2 Banks x 512K x 16 Bit Synchronous DRAM |
Hynix Semiconductor |
| 9 |
HY57V161610ET-55I |
2 Banks x 512K x 16 Bit Synchronous DRAM |
Hynix Semiconductor |
| 10 |
HY57V161610ETP-55I |
2 banks x 512K x 16 bit synchronous DRAM, LVTTL, 183MHz |
Hynix Semiconductor |
| 11 |
HY57V641620HGLT-55I |
4 banks x 1M x 16Bit synchronous DRAM, 3.3V, LVTTL, low power, 183 MHz |
Hynix Semiconductor |
| 12 |
HY57V641620HGT-55I |
4 Banks x 1M x 16Bit Synchronous DRAM |
Hynix Semiconductor |
| 13 |
N01L163WC2AB-55I |
1Mb Ultra-Low Power Asynchronous CMOS SRAM |
etc |
| 14 |
N01L163WC2AB1-55I |
1Mb Ultra-Low Power Asynchronous CMOS SRAM |
etc |
| 15 |
N01L163WC2AT-55I |
1Mb Ultra-Low Power Asynchronous CMOS SRAM |
etc |
| 16 |
N01L163WC2AT2-55I |
1Mb Ultra-Low Power Asynchronous CMOS SRAM |
etc |
| 17 |
N02L163WN1AB-55I |
2Mb Ultra-Low Power Asynchronous CMOS SRAM |
etc |
| 18 |
N02L163WN1AB1-55I |
2Mb Ultra-Low Power Asynchronous CMOS SRAM |
etc |
| 19 |
N02L163WN1AT-55I |
2Mb Ultra-Low Power Asynchronous CMOS SRAM |
etc |
| 20 |
N02L163WN1AT2-55I |
2Mb Ultra-Low Power Asynchronous CMOS SRAM |
etc |
| | | |
