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Datasheets found :: 5
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| 1 |
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| No. | Part Name | Description | Manufacturer |
|---|---|---|---|
| 1 | RM400DY-66S | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V | Mitsubishi Electric Corporation |
| 2 | RM400DY-66S | HIGH POWER, HIGH SPEED SWITCHING USE INSULATED TYPE | Powerex Power Semiconductors |
| 3 | RM600DY-66S | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V | Mitsubishi Electric Corporation |
| 4 | RM600DY-66S | HIGH POWER, HIGH SPEED SWITCHING USE INSULATED TYPE | Powerex Power Semiconductors |
| 5 | SPB-66S | Schottky Barrier Diode - 60V | Sanken |
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Datasheets found :: 5
Page:
| 1 |
|