| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1032E-70LJ |
High-Density Programmable Logic |
Lattice Semiconductor |
| 2 |
1032E-70LJI |
High-Density Programmable Logic |
Lattice Semiconductor |
| 3 |
1032E-70LT |
High-Density Programmable Logic |
Lattice Semiconductor |
| 4 |
1032E-70LTI |
High-Density Programmable Logic |
Lattice Semiconductor |
| 5 |
1214-700P |
Pulsed Power L-Band (Si) |
Microsemi |
| 6 |
1214-700P1 |
Pulsed Power L-Band (Si) |
Microsemi |
| 7 |
1505-70A |
Delay 70 +/-3.5 ns, 5-TAP SIP delay line Td/Tr=3 |
Data Delay Devices Inc |
| 8 |
1514-70D |
Delay 70 +/-3.5 ns, fixed SIP delay line Td/Tr=5 |
Data Delay Devices Inc |
| 9 |
1514-70E |
Delay 70 +/-3.5 ns, fixed SIP delay line Td/Tr=5 |
Data Delay Devices Inc |
| 10 |
1515-70A |
Delay 70 +/-3.5 ns, fixed SIP delay line Td/Tr=10 |
Data Delay Devices Inc |
| 11 |
1515-70Y |
Delay 70 +/-3.5 ns, fixed SIP delay line Td/Tr=10 |
Data Delay Devices Inc |
| 12 |
1BQ20 |
20V 1A Schottky BRIDGE Diode in a D-70 (Bridge) package |
International Rectifier |
| 13 |
1BQ40 |
40V 1A Schottky BRIDGE Diode in a D-70 (Bridge) package |
International Rectifier |
| 14 |
1S2076A |
Silicon Epitaxial Planar Diode, intended for use in Various Detector, Modulator, Demodulator VR(peak)=-70V, VR=-60V |
Hitachi Semiconductor |
| 15 |
2020-700 |
Delay 700 +/-14 ns, fixed SIP delay line Tr |
Data Delay Devices Inc |
| 16 |
2021-700 |
Delay 700 +/-14 ns, fixed SIP delay line Tr |
Data Delay Devices Inc |
| 17 |
2N5955 |
Silicon P-N-P medium-power transistor. -70V, 40W. |
General Electric Solid State |
| 18 |
2N6246 |
Epitaxial-base, silicon P-N-P high-power transistor. -70V, 125W. |
General Electric Solid State |
| 19 |
2N6490 |
15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -70V. |
General Electric Solid State |
| 20 |
2N7002W |
Small Signal MOSFET 60V 340mA 1.6 Ohm Single N-Channel SC-70 |
ON Semiconductor |
| 21 |
2SA1398 |
900mW Lead frame PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC3580 |
Isahaya Electronics Corporation |
| 22 |
2SA1946 |
500mW SMD PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC5212 |
Isahaya Electronics Corporation |
| 23 |
2SA2002 |
600mW Lead frame PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC5485 |
Isahaya Electronics Corporation |
| 24 |
2SB1477 |
Trans GP BJT PNP 16V 0.5A 3-Pin SC-70 |
New Jersey Semiconductor |
| 25 |
2SB1478 |
Trans GP BJT PNP 16V 0.5A 3-Pin SC-70 |
New Jersey Semiconductor |
| 26 |
704-15K36 |
31.5V; peak pulse power:15KWatts; high power aircraft/vehicle DC bus voltage suppressor. For DC power supply protection, MIL-STD-704 power bus protection |
Protek Devices |
| 27 |
704-15K36T |
31.5V; peak pulse power:15KWatts; high power aircraft/vehicle DC bus voltage suppressor. For DC power supply protection, MIL-STD-704 power bus protection |
Protek Devices |
| 28 |
A23L16161V-70 |
2M X 16 / 4M X 8 BIT CMOS MASK ROM |
AMIC Technology |
| 29 |
A23L16162R-70 |
70ns 2M x 16/4M x 8bit CMOS MASK ROM |
AMIC Technology |
| 30 |
A23L16162V-70 |
2M X 16 / 4M X 8 BIT CMOS MASK ROM |
AMIC Technology |
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