| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2075-4000 |
Delay 4000 +/-80 ns, fixed high B.W. line Tr |
Data Delay Devices Inc |
| 2 |
2N6650 |
10 A P-N-P darlington power transistor. -80 V. 70 W. Gain of 1000 at 5 A. |
General Electric Solid State |
| 3 |
2N6668 |
10 A P-N-P darlington power transistor. -80 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
| 4 |
JH-115 |
40-80 MHz, surface mount quadrature hybrid |
MA-Com |
| 5 |
JHS-115 |
40-80 MHz, surface mount quadrature hybrid |
MA-Com |
| 6 |
KSA614 |
-80 V, -3 A, PNP epitaxial silicon transistor |
Samsung Electronic |
| 7 |
KSB596 |
-80 V, -4 A, PNP epitaxial silicon transistor |
Samsung Electronic |
| 8 |
KSB708 |
-80 V, -7 A, PNP epitaxial silicon transistor |
Samsung Electronic |
| 9 |
KSB795 |
-80 V, +/-1.5 A, PNP epitaxial silicon darlington transistor |
Samsung Electronic |
| 10 |
MAX13051ASA |
+/-80 V fault-protected can transceiver with autobaud |
MAXIM - Dallas Semiconductor |
| 11 |
MAX13051ESA |
+/-80 V fault-protected can transceiver with autobaud |
MAXIM - Dallas Semiconductor |
| 12 |
MAX3430ERA |
+/-80 V fault-protected, fail-safe, 1/4-unit load, +3.3 V,RS-485 transceiver |
MAXIM - Dallas Semiconductor |
| 13 |
MJ14001 |
60 AMPERES COMPLEMENTARY SILICON POWER TRANSITORS 60-80 VOLTS 300 WATTS |
Motorola |
| 14 |
MJ14002 |
60 AMPERES COMPLEMENTARY SILICON POWER TRANSITORS 60-80 VOLTS 300 WATTS |
Motorola |
| 15 |
MJ14003 |
60 AMPERES COMPLEMENTARY SILICON POWER TRANSITORS 60-80 VOLTS 300 WATTS |
Motorola |
| 16 |
MJE171 |
3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 12.5 WATTS |
Motorola |
| 17 |
MJE171 |
-80 V, -1 A, PNP epitaxial silicon transistor |
Samsung Electronic |
| 18 |
MJE172 |
3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 12.5 WATTS |
Motorola |
| 19 |
MJE181 |
3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 12.5 WATTS |
Motorola |
| 20 |
MJE182 |
3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 12.5 WATTS |
Motorola |
| 21 |
NE25339 |
General purpose dual-gate GaAs MESFET. IDSS range 10-80 mA. |
NEC |
| 22 |
NE25339-T1 |
General purpose dual-gate GaAs MESFET. IDSS range 10-80 mA. |
NEC |
| 23 |
PDU53-400 |
Delay 400 +/-80 ns, 3-BIT, ECL-interfaced programmable delay line |
Data Delay Devices Inc |
| 24 |
PDU53-400C3 |
Delay 400 +/-80 ns, 3-BIT, ECL-interfaced programmable delay line |
Data Delay Devices Inc |
| 25 |
PDU53-400M |
Delay 400 +/-80 ns, 3-BIT, ECL-interfaced programmable delay line |
Data Delay Devices Inc |
| 26 |
PDU53-400MC3 |
Delay 400 +/-80 ns, 3-BIT, ECL-interfaced programmable delay line |
Data Delay Devices Inc |
| 27 |
PDU54-400 |
Delay 400 +/-80 ns, 4-BIT, ECL-interfaced programmable delay line |
Data Delay Devices Inc |
| 28 |
PDU54-400C4 |
Delay 400 +/-80 ns, 4-BIT, ECL-interfaced programmable delay line |
Data Delay Devices Inc |
| 29 |
PDU54-400M |
Delay 400 +/-80 ns, 4-BIT, ECL-interfaced programmable delay line |
Data Delay Devices Inc |
| 30 |
PDU54-400MC4 |
Delay 400 +/-80 ns, 4-BIT, ECL-interfaced programmable delay line |
Data Delay Devices Inc |
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