| No. |
Part Name |
Description |
Manufacturer |
| 1 |
08090 |
LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz |
Infineon |
| 2 |
1496-3 |
24V 55W Class C epitaxial silicon NPN planar transistor 900-960MHz |
SGS Thomson Microelectronics |
| 3 |
2089-6218-00 |
890-960 MHz, Power divider, 2,3.4.6.8-way |
MA-Com |
| 4 |
2089-6318-00 |
890-960 MHz, Power divider, 2,3.4.6.8-way |
MA-Com |
| 5 |
2089-6418-00 |
890-960 MHz, Power divider, 2,3.4.6.8-way |
MA-Com |
| 6 |
2089-6618-00 |
890-960 MHz, Power divider, 2,3.4.6.8-way |
MA-Com |
| 7 |
2089-6818-00 |
890-960 MHz, Power divider, 2,3.4.6.8-way |
MA-Com |
| 8 |
2N6266 |
10-, 16-, 30-, and 60-Watt Broadband (620-to-960-MHz) Power Amplifiers Using the RCA-2N6266 and 2N6267 Microwave Power Transistors - App. Note |
RCA Solid State |
| 9 |
2N6267 |
10-, 16-, 30-, and 60-Watt Broadband (620-to-960-MHz) Power Amplifiers Using the RCA-2N6266 and 2N6267 Microwave Power Transistors - App. Note |
RCA Solid State |
| 10 |
2SC3282A |
Class C, 800-960MHz 12V power transistor (This datasheet of NEM082081B-12 is also the datasheet of 2SC3282A, see the Electrical Characteristics table) |
NEC |
| 11 |
2SC3283A |
Class C, 800-960MHz 12V power transistor (This datasheet of NEM084081B-12 is also the datasheet of 2SC3283A, see the Electrical Characteristics table) |
NEC |
| 12 |
2SD1398 |
RF & microwave transistor 850-960 MHz applications, 24 volts, 53W |
SGS Thomson Microelectronics |
| 13 |
2SD1398 |
RF & MICROWAVE TRANSISTORS 850-960 MHz APPLICATIONS |
ST Microelectronics |
| 14 |
3032 |
90 CROSSOVER HYBRID COUPLER 800-900,890-960, OR 1700-1900 MHZ |
Tyco Electronics |
| 15 |
3032-6018-00 |
890-960 MHz, 3dB, 90 crossover hybrid coupler |
MA-Com |
| 16 |
80610-18 |
High power, common base NPN silicon bipolar device optimized for CW operation in the 620-960MHz |
SGS Thomson Microelectronics |
| 17 |
80610-50 |
High power, common base NPN silicon bipolar device optimized for CW operation in the 750-960MHz |
SGS Thomson Microelectronics |
| 18 |
8090 |
LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz |
Infineon |
| 19 |
ABC900-30E |
Linear Power Amplifier 30W 890-960MHz, specifically designed for cellular radio base station applications |
Motorola |
| 20 |
ABC900-60E |
Linear Power Amplifier 30W 890-960MHz, specifically designed for cellular radio base station applications |
Motorola |
| 21 |
AM52-0001 |
800-960 MHz, 1.2 W high efficiency power amplifier |
MA-Com |
| 22 |
AM52-0001SMB |
800-960 MHz, 1.2 W high efficiency power amplifier |
MA-Com |
| 23 |
AM52-0001TR |
800-960 MHz, 1.2 W high efficiency power amplifier |
MA-Com |
| 24 |
AM80610-018 |
High power, common base NPN silicon bipolar device optimized for CW operation in the 620-960MHz |
SGS Thomson Microelectronics |
| 25 |
AM80610-050 |
High power, common base NPN silicon bipolar device optimized for CW operation in the 750-960MHz |
SGS Thomson Microelectronics |
| 26 |
AMR900-30 |
Linear Power Amplifier 30W, 800-960MHz, 26Vcc |
Motorola |
| 27 |
AMR900-60 |
Linear Power Amplifier 60W, 800-960MHz, 24Vcc |
Motorola |
| 28 |
AMR900-60A |
Linear Power Amplifier 30W, 800-960MHz, 26Vcc |
Motorola |
| 29 |
AMR960-35E |
Linear Power Amplifier 35W, 925-960MHz, 26Vcc |
Motorola |
| 30 |
AMR960-35HE |
Linear Power Amplifier 35W, 925-960MHz, 26Vcc, designed for Cellular Radio GSM, NMT, E-TACS, AMPS applications |
Motorola |
| | | |
