| No. |
Part Name |
Description |
Manufacturer |
| 1 |
GAO10C-1A |
Gallium-arsenide GUNN device |
Siemens |
| 2 |
GAO10D-1A |
Gallium-arsenide GUNN device |
Siemens |
| 3 |
GAO10E-1A |
Gallium-arsenide GUNN device |
Siemens |
| 4 |
GAO10F-1A |
Gallium-arsenide GUNN device |
Siemens |
| 5 |
GAO10G-1A |
Gallium-arsenide GUNN device |
Siemens |
| 6 |
GAO10I-1A |
Gallium-arsenide GUNN device |
Siemens |
| 7 |
GAO20C-1B |
Gallium-arsenide GUNN device |
Siemens |
| 8 |
GAO20D-1B |
Gallium-arsenide GUNN device |
Siemens |
| 9 |
GAO20E-1B |
Gallium-arsenide GUNN device |
Siemens |
| 10 |
GAO20F-1B |
Gallium-arsenide GUNN device |
Siemens |
| 11 |
GAO20G-1B |
Gallium-arsenide GUNN device |
Siemens |
| 12 |
GAO20I-1B |
Gallium-arsenide GUNN device |
Siemens |
| 13 |
GAO50C-1C |
Gallium-arsenide GUNN device |
Siemens |
| 14 |
GAO50D-1C |
Gallium-arsenide GUNN device |
Siemens |
| 15 |
GAO50E-1C |
Gallium-arsenide GUNN device |
Siemens |
| 16 |
GAO50F-1C |
Gallium-arsenide GUNN device |
Siemens |
| 17 |
GAO50G-1C |
Gallium-arsenide GUNN device |
Siemens |
| 18 |
GAO50I-1C |
Gallium-arsenide GUNN device |
Siemens |
| 19 |
MT3S150P |
Gallium-Arsenide heterojunction bipolar transistor |
TOSHIBA |
| 20 |
TIL191 |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 21 |
TIL191A |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 22 |
TIL191B |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 23 |
TIL192 |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 24 |
TIL192A |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 25 |
TIL192B |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 26 |
TIL193 |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 27 |
TIL193A |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 28 |
TIL193B |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
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