| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1S920 |
Glass passivated silicon diode with high-break-off voltage for general purpoe application |
Texas Instruments |
| 2 |
1S921 |
Glass passivated silicon diode with high-break-off voltage for general purpoe application |
Texas Instruments |
| 3 |
1S922 |
Glass passivated silicon diode with high-break-off voltage for general purpoe application |
Texas Instruments |
| 4 |
1S923 |
Glass passivated silicon diode with high-break-off voltage for general purpoe application |
Texas Instruments |
| 5 |
2N3055 |
Diffused NPN silicon LF power transistor with very good second-breakdown properties, for high-power LF power amplifiers, stabilization circuits and power switch applications |
ITT Semiconductors |
| 6 |
AD7564AR-BREEL |
+3.3 V/+5 V, Low Power, Quad 12-Bit CMOS DAC |
Analog Devices |
| 7 |
BA187 |
Glass passivated silicon diode with high-break-off voltage for general purpoe application |
Texas Instruments |
| 8 |
BA188 |
Glass passivated silicon diode with high-break-off voltage for general purpoe application |
Texas Instruments |
| 9 |
BA189 |
Glass passivated silicon diode with high-break-off voltage for general purpoe application |
Texas Instruments |
| 10 |
BA190 |
Glass passivated silicon diode with high-break-off voltage for general purpoe application |
Texas Instruments |
| 11 |
M38122M2-XXXFP |
3812 Series Microcontrollers: MCUs with Built-in HBV (High-Breakdown-Voltage) |
Mitsubishi Electric Corporation |
| 12 |
M38122M2-XXXSP |
3812 Series Microcontrollers: MCUs with Built-in HBV (High-Breakdown-Voltage) |
Mitsubishi Electric Corporation |
| 13 |
M38122M4-XXXFP |
3812 Series Microcontrollers: MCUs with Built-in HBV (High-Breakdown-Voltage) |
Mitsubishi Electric Corporation |
| 14 |
M38122M4-XXXSP |
3812 Series Microcontrollers: MCUs with Built-in HBV (High-Breakdown-Voltage) |
Mitsubishi Electric Corporation |
| 15 |
M38123M4-XXXFP |
3812 Series Microcontrollers: MCUs with Built-in HBV (High-Breakdown-Voltage) |
Mitsubishi Electric Corporation |
| 16 |
M38123M4-XXXSP |
3812 Series Microcontrollers: MCUs with Built-in HBV (High-Breakdown-Voltage) |
Mitsubishi Electric Corporation |
| 17 |
M38123M6-XXXFP |
3812 Series Microcontrollers: MCUs with Built-in HBV (High-Breakdown-Voltage) |
Mitsubishi Electric Corporation |
| 18 |
M38123M6-XXXSP |
3812 Series Microcontrollers: MCUs with Built-in HBV (High-Breakdown-Voltage) |
Mitsubishi Electric Corporation |
| 19 |
M38127EC-XXXFP |
3812 Series Microcontrollers: MCUs with Built-in HBV (High-Breakdown-Voltage) |
Mitsubishi Electric Corporation |
| 20 |
M38127EC-XXXSP |
3812 Series Microcontrollers: MCUs with Built-in HBV (High-Breakdown-Voltage) |
Mitsubishi Electric Corporation |
| 21 |
M38127ECFP |
3812 Series Microcontrollers: MCUs with Built-in HBV (High-Breakdown-Voltage) |
Mitsubishi Electric Corporation |
| 22 |
M38127ECFS |
3812 Series Microcontrollers: MCUs with Built-in HBV (High-Breakdown-Voltage) |
Mitsubishi Electric Corporation |
| 23 |
M38127ECSP |
3812 Series Microcontrollers: MCUs with Built-in HBV (High-Breakdown-Voltage) |
Mitsubishi Electric Corporation |
| 24 |
M38127ECSS |
3812 Series Microcontrollers: MCUs with Built-in HBV (High-Breakdown-Voltage) |
Mitsubishi Electric Corporation |
| 25 |
M38127M8-XXXFP |
3812 Series Microcontrollers: MCUs with Built-in HBV (High-Breakdown-Voltage) |
Mitsubishi Electric Corporation |
| 26 |
M38127M8-XXXSP |
3812 Series Microcontrollers: MCUs with Built-in HBV (High-Breakdown-Voltage) |
Mitsubishi Electric Corporation |
| 27 |
MM24128-BREA5T |
256/128 Kbit Serial I C Bus EEPROM With Three Chip Enable Lines |
SGS Thomson Microelectronics |
| 28 |
MM24128-BREA5T |
256/128 Kbit Serial I C Bus EEPROM With Three Chip Enable Lines |
ST Microelectronics |
| 29 |
MM24128-BREA6T |
256/128 Kbit Serial I C Bus EEPROM With Three Chip Enable Lines |
SGS Thomson Microelectronics |
| 30 |
MM24128-BREA6T |
256/128 Kbit Serial I C Bus EEPROM With Three Chip Enable Lines |
ST Microelectronics |
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