| No. |
Part Name |
Description |
Manufacturer |
| 1 |
12FXF11 |
Silicon alloy-diffused junction avalanche rectifier 3000V 3.8kW 12A |
TOSHIBA |
| 2 |
12LF11 |
Silicon alloy-diffused junction avalanche rectifier 800V 12A 3.8kW |
TOSHIBA |
| 3 |
12NF11 |
Silicon alloy-diffused junction avalanche rectifier 1000V 12A 3.8kW |
TOSHIBA |
| 4 |
12QF11 |
Silicon alloy-diffused junction avalanche rectifier 1200V 12A 3.8kW |
TOSHIBA |
| 5 |
150LD11 |
Silicon alloy-diffused junction rectifier 800V 150A |
TOSHIBA |
| 6 |
150ND11 |
Silicon alloy-diffused junction rectifier 1000V 150A |
TOSHIBA |
| 7 |
150QD11 |
Silicon alloy-diffused junction rectifier 1200V 150A |
TOSHIBA |
| 8 |
150TD11 |
Silicon alloy-diffused junction rectifier 1500V 150A |
TOSHIBA |
| 9 |
150UC11 |
Silicon alloy-diffused junction rectifier 1600V 150A |
TOSHIBA |
| 10 |
1600EXD22 |
Silicon alloy-diffused junction rectifier 2500V 1600A |
TOSHIBA |
| 11 |
1600FD21 |
Silicon alloy-diffused junction rectifier 300V 1600A |
TOSHIBA |
| 12 |
1600FXD22 |
Silicon alloy-diffused junction rectifier 3000V 1600A |
TOSHIBA |
| 13 |
1LE11 |
Silicon alloy-diffused junction avalanche rectifier 1A 800V |
TOSHIBA |
| 14 |
1NE11 |
Silicon alloy-diffused junction avalanche rectifier 1A 1000V |
TOSHIBA |
| 15 |
1QE11 |
Silicon alloy-diffused junction avalanche rectifier 1A 1200V |
TOSHIBA |
| 16 |
250UC11 |
Silicon alloy-diffused junction high-current rectifier 1600V 250A |
TOSHIBA |
| 17 |
25FXF11 |
Silicon Alloy-Diffused junction avalanche rectifier 25A 3000V 8kW |
TOSHIBA |
| 18 |
25LF11 |
Silicon Alloy-Diffused junction avalanche rectifier 25A 800V 12kW |
TOSHIBA |
| 19 |
25NF11 |
Silicon Alloy-Diffused junction avalanche rectifier 25A 1000V 12kW |
TOSHIBA |
| 20 |
25QF11 |
Silicon Alloy-Diffused junction avalanche rectifier 25A 1200V 12kW |
TOSHIBA |
| 21 |
2N1491 |
NPN triple-diffused silicon RF Power Transistor |
RCA Solid State |
| 22 |
2N1492 |
NPN triple-diffused silicon RF Power Transistor |
RCA Solid State |
| 23 |
2N1493 |
NPN triple-diffused silicon RF Power Transistor |
RCA Solid State |
| 24 |
2N2212 |
10A PNP Alloy-Diffused Epitaxial Germanium Power Transistor |
Motorola |
| 25 |
2N2322 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 26 |
2N2323 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 27 |
2N2324 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 28 |
2N2325 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 29 |
2N2326 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 30 |
2N2631 |
NPN triple-diffused planar silicon RF Power Transistor |
RCA Solid State |
| | | |
