Datasheets for -F16

Datasheets found :: 16 Page: | 1 |

No.	Part Name	Description	Manufacturer
1	5082-F161-00000	10 mm (0.40 inch) Seven Segment Displays	Agilent (Hewlett-Packard)
2	5082-F161-00016	10 mm (0.40 inch) Seven Segment Displays	Agilent (Hewlett-Packard)
3	BZV55-F16	ZENER DIODES	General Semiconductor
4	BZX79-F16	SILICON PLANAR ZENER DIODES	General Semiconductor
5	HDSP-F161-00000	10 mm (0.40 inch) Seven Segment Displays	Agilent (Hewlett-Packard)
6	HDSP-F161-00016	10 mm (0.40 inch) Seven Segment Displays	Agilent (Hewlett-Packard)
7	LLQ1608-F16N	Wirewound Chip Inductors	TOKO
8	Q62702-F1601	NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)	Siemens
9	Q62702-F1611	NPN Silicon RF Transistor (For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA.)	Siemens
10	Q62702-F1613	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network	Siemens
11	Q62702-F1627	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)	Siemens
12	Q62702-F1628	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network)	Siemens
13	Q62702-F1645	NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA)	Siemens
14	Q62702-F1665	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)	Siemens
15	Q62702-F1681	PNP Silicon RF Transistor (For broadband amplifiers up to 2GHz at collector currents up to 20mA)	Siemens
16	Q62702-F1685	NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA)	Siemens

Datasheets found :: 16 Page: | 1 |