| No. |
Part Name |
Description |
Manufacturer |
| 1 |
CGH09120F |
120W, UHF - 2.5 GHz, GaN HEMT for WCDMA, LTE, MC-GSM |
Wolfspeed |
| 2 |
E2081606_PF08127B |
MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone |
Renesas |
| 3 |
MF1090S-1 |
FOR E-GSM MOBILE TELEPHONE, Rx |
Mitsubishi Electric Corporation |
| 4 |
MF1090V-3 |
FOR E-GSM MOBILE TELEPHONE, Rx |
Mitsubishi Electric Corporation |
| 5 |
MF1157V-2 |
FOR E-GSM MOBILE TELEPHONE, Tx |
Mitsubishi Electric Corporation |
| 6 |
PF01411 |
MOS FET Power Amplifier Module for E-GSM Handy Phone |
Hitachi Semiconductor |
| 7 |
PF01411A |
MOS FET Power Amplifier Module for E-GSM Handy Phone |
Hitachi Semiconductor |
| 8 |
PF01411B |
MOS FET Power Amplifier Module for E-GSM Handy Phone |
Hitachi Semiconductor |
| 9 |
PF01412 |
MOS FET Power Amplifier Module for E-GSM Handy Phone |
Hitachi Semiconductor |
| 10 |
PF01412A |
MOS FET Power Amplifier Module for E-GSM Handy Phone |
Hitachi Semiconductor |
| 11 |
PF08103A |
MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone |
Hitachi Semiconductor |
| 12 |
PF08103B |
MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone |
Hitachi Semiconductor |
| 13 |
PF08109B |
MOS FET Power Amplifier Module for E-GSM and DCS1800 Dual Band Handy Phone |
Renesas |
| | | |
