| No. |
Part Name |
Description |
Manufacturer |
| 1 |
AB-043 |
USE LOW-IMPEDANCE BRIDGES ON 4-20mA CURRENT LOOPS |
Burr Brown |
| 2 |
CFY25 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 3 |
CFY25-17 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 4 |
CFY25-20 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 5 |
CFY25-23 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 6 |
GTL2008PW |
12-bit GTL to LVTTL translator with power good control and high-impedance LVTTL and GTL outputs |
NXP Semiconductors |
| 7 |
HM301D |
Diagnostic quality acquisition system for bio-electric sensors and bio-impedance measurements |
ST Microelectronics |
| 8 |
HM301DL |
Diagnostic quality acquisition system for bio-electric sensors and bio-impedance measurements |
ST Microelectronics |
| 9 |
IT1-168P/28-19H |
High Speed, Matched-Impedance, Parallel Board-to-board Connector System |
Hirose Electric |
| 10 |
IT1-168P/28-30H |
High Speed, Matched-Impedance, Parallel Board-to-board Connector System |
Hirose Electric |
| 11 |
IT1-168S-SV |
High Speed, Matched-Impedance, Parallel Board-to-board Connector System |
Hirose Electric |
| 12 |
IT1-252P/44-23H |
High Speed, Matched-Impedance, Parallel Board-to-board Connector System |
Hirose Electric |
| 13 |
IT1-252P/44-30H |
High Speed, Matched-Impedance, Parallel Board-to-board Connector System |
Hirose Electric |
| 14 |
IT1-252S-SV |
High Speed, Matched-Impedance, Parallel Board-to-board Connector System |
Hirose Electric |
| 15 |
IT1A-168S-SV |
High Speed, Matched-Impedance, Parallel Board-to-board Connector System |
Hirose Electric |
| 16 |
IT1A-252S-SV |
High Speed, Matched-Impedance, Parallel Board-to-board Connector System |
Hirose Electric |
| 17 |
Q62703-F106 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 18 |
Q62703-F107 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 19 |
Q62703-F108 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 20 |
SY10/100EL12 |
LOW-IMPEDANCE DRIVER |
Micrel Semiconductor |
| 21 |
SY100EL12 |
LOW-IMPEDANCE DRIVER |
Micrel Semiconductor |
| 22 |
UNI-IMPS |
HIGH-SPEED TRANSIENT SURGE PROTECTORS |
Clare Inc |
| 23 |
ZC820 |
SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES |
Zetex Semiconductors |
| 24 |
ZC820A |
SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES |
Zetex Semiconductors |
| 25 |
ZC820B |
SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES |
Zetex Semiconductors |
| 26 |
ZC821 |
SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES |
Zetex Semiconductors |
| 27 |
ZC821A |
SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES |
Zetex Semiconductors |
| 28 |
ZC821B |
SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES |
Zetex Semiconductors |
| 29 |
ZC822 |
SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES |
Zetex Semiconductors |
| 30 |
ZC822A |
SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES |
Zetex Semiconductors |
| | | |
