| No. |
Part Name |
Description |
Manufacturer |
| 1 |
HLMP-CB15-RK000 |
T-1 3/4 (5 mm) Precision Optical Performance InGaN Blue and Green LEDs |
Agilent (Hewlett-Packard) |
| 2 |
HLMP-CB16-RK000 |
T-1 3/4 (5 mm) Precision Optical Performance InGaN Blue and Green LEDs |
Agilent (Hewlett-Packard) |
| 3 |
HLMP-CB30-RK000 |
T-1 3/4 (5 mm) Precision Optical Performance InGaN Blue and Green LEDs |
Agilent (Hewlett-Packard) |
| 4 |
HLMP-CB31-RK000 |
T-1 3/4 (5 mm) Precision Optical Performance InGaN Blue and Green LEDs |
Agilent (Hewlett-Packard) |
| 5 |
HLMP-CM15-RK000 |
T-1 3/4 (5 mm) Precision Optical Performance InGaN Blue and Green LEDs |
Agilent (Hewlett-Packard) |
| 6 |
HLMP-CM16-RK000 |
T-1 3/4 (5 mm) Precision Optical Performance InGaN Blue and Green LEDs |
Agilent (Hewlett-Packard) |
| 7 |
HLMP-CM30-RK000 |
T-1 3/4 (5 mm) Precision Optical Performance InGaN Blue and Green LEDs |
Agilent (Hewlett-Packard) |
| 8 |
HLMP-CM31-RK000 |
T-1 3/4 (5 mm) Precision Optical Performance InGaN Blue and Green LEDs |
Agilent (Hewlett-Packard) |
| 9 |
ILBB0603-RK300V |
Multilayer Ferrite Beads |
Vishay |
| 10 |
KM416RD8AC(D)-RK70 |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 11 |
KM416RD8AC(D)-RK80 |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 12 |
KM416RD8AC-RK70 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). |
Samsung Electronic |
| 13 |
KM416RD8AC-RK80 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz). |
Samsung Electronic |
| 14 |
KM416RD8AD-RK70 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). |
Samsung Electronic |
| 15 |
KM416RD8AD-RK80 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz). |
Samsung Electronic |
| 16 |
KM418RD8AC(D)-RK70 |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 17 |
KM418RD8AC(D)-RK80 |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 18 |
KM418RD8AC-RK70 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). |
Samsung Electronic |
| 19 |
KM418RD8AC-RK80 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz). |
Samsung Electronic |
| 20 |
KM418RD8AD-RK70 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). |
Samsung Electronic |
| 21 |
KM418RD8AD-RK80 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz). |
Samsung Electronic |
| 22 |
KP202-RK |
Silicon Piezoresistive Absolute Press... |
Infineon |
| 23 |
KP203-RK |
Silicon Piezoresistive Absolute Press... |
Infineon |
| 24 |
KPY32-RK |
Silicon Piezoresistive Relative Pressure Sensor |
Siemens |
| 25 |
KPY33-RK |
Silicon Piezoresistive Relative Pressure Sensor |
Siemens |
| 26 |
KPY51-RK |
Silicon Piezoresistive Relative Pressure Sensor |
Siemens |
| 27 |
KPY62-RK |
Silicon Piezoresistive Pressure Sensor |
Infineon |
| 28 |
KPY62-RK |
Silicon Piezoresistive Pressure Sensor |
Siemens |
| 29 |
KPY63-RK |
Silicon Piezoresistive Pressure Sensor |
Infineon |
| 30 |
KPY64-RK |
Silicon Piezoresistive Pressure Sensor |
Infineon |
| | | |
