No. |
Part Name |
Description |
Manufacturer |
1 |
13003BR |
NPN EPITAXIAL PLANAR TRANSISTOR |
Hi-Sincerity Microelectronics |
2 |
13003BR |
NPN EPITAXIAL PLANAR TRANSISTOR |
Hi-Sincerity Microelectronics |
3 |
1N4148 |
SMALL-SIGNAL SWITCHING DIODE |
Jinan Gude Electronic Device |
4 |
1N4148W |
Small-Signal Diode |
Vishay |
5 |
1N4148WS |
Small-Signal Diode |
Vishay |
6 |
1SS385FV |
Small-signal Schottky barrier diode |
TOSHIBA |
7 |
1SS405 |
Small-signal Schottky barrier diode |
TOSHIBA |
8 |
1SS406 |
Small-signal Schottky barrier diode |
TOSHIBA |
9 |
1SS413 |
Small-signal Schottky barrier diode |
TOSHIBA |
10 |
1SS413CT |
Small-signal Schottky barrier diode |
TOSHIBA |
11 |
1SS416 |
Small-signal Schottky barrier diode |
TOSHIBA |
12 |
1SS416CT |
Small-signal Schottky barrier diode |
TOSHIBA |
13 |
1SS417 |
Small-signal Schottky barrier diode |
TOSHIBA |
14 |
1SS417CT |
Small-signal Schottky barrier diode |
TOSHIBA |
15 |
1SS418 |
Small-signal Schottky barrier diode |
TOSHIBA |
16 |
1SS419 |
Small-signal Schottky barrier diode |
TOSHIBA |
17 |
1SS420 |
Small-signal Schottky barrier diode |
TOSHIBA |
18 |
1SS420CT |
Small-signal Schottky barrier diode |
TOSHIBA |
19 |
1SS421 |
Small-signal Schottky barrier diode |
TOSHIBA |
20 |
1SS422 |
Small-signal Schottky barrier diode |
TOSHIBA |
21 |
1SS423 |
Small-signal Schottky barrier diode |
TOSHIBA |
22 |
1SS424 |
Small-signal Schottky barrier diode |
TOSHIBA |
23 |
2557 |
PROTECTEDQUADLOW-SIDEDRIVERWITHFAULTDETECTION&SLEEPMODE |
Allegro MicroSystems |
24 |
2N1742 |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
25 |
2N1983 |
NPN silicon annular small-signal transistor |
Motorola |
26 |
2N1984 |
NPN silicon annular small-signal transistor |
Motorola |
27 |
2N2171 |
PNP germanium transistor for small-signal audio amplifiers, Class B push-pull output stages and medium-speed switching circuits |
Motorola |
28 |
2N2857 |
NPN silicon RF small-signal transistor |
Motorola |
29 |
2N2857 |
NPN silicon annular small-signal amplifier transistor designed for amplifiers, oscillators and mixers |
Motorola |
30 |
2N3375 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
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