| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N4148 |
SMALL-SIGNAL SWITCHING DIODE |
Jinan Gude Electronic Device |
| 2 |
1N4148W |
Small-Signal Diode |
Vishay |
| 3 |
1N4148WS |
Small-Signal Diode |
Vishay |
| 4 |
1SS385FV |
Small-signal Schottky barrier diode |
TOSHIBA |
| 5 |
1SS405 |
Small-signal Schottky barrier diode |
TOSHIBA |
| 6 |
1SS406 |
Small-signal Schottky barrier diode |
TOSHIBA |
| 7 |
1SS413 |
Small-signal Schottky barrier diode |
TOSHIBA |
| 8 |
1SS413CT |
Small-signal Schottky barrier diode |
TOSHIBA |
| 9 |
1SS416 |
Small-signal Schottky barrier diode |
TOSHIBA |
| 10 |
1SS416CT |
Small-signal Schottky barrier diode |
TOSHIBA |
| 11 |
1SS417 |
Small-signal Schottky barrier diode |
TOSHIBA |
| 12 |
1SS417CT |
Small-signal Schottky barrier diode |
TOSHIBA |
| 13 |
1SS418 |
Small-signal Schottky barrier diode |
TOSHIBA |
| 14 |
1SS419 |
Small-signal Schottky barrier diode |
TOSHIBA |
| 15 |
1SS420 |
Small-signal Schottky barrier diode |
TOSHIBA |
| 16 |
1SS420CT |
Small-signal Schottky barrier diode |
TOSHIBA |
| 17 |
1SS421 |
Small-signal Schottky barrier diode |
TOSHIBA |
| 18 |
1SS422 |
Small-signal Schottky barrier diode |
TOSHIBA |
| 19 |
1SS423 |
Small-signal Schottky barrier diode |
TOSHIBA |
| 20 |
1SS424 |
Small-signal Schottky barrier diode |
TOSHIBA |
| 21 |
2N1742 |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
| 22 |
2N1983 |
NPN silicon annular small-signal transistor |
Motorola |
| 23 |
2N1984 |
NPN silicon annular small-signal transistor |
Motorola |
| 24 |
2N2171 |
PNP germanium transistor for small-signal audio amplifiers, Class B push-pull output stages and medium-speed switching circuits |
Motorola |
| 25 |
2N2857 |
NPN silicon RF small-signal transistor |
Motorola |
| 26 |
2N2857 |
NPN silicon annular small-signal amplifier transistor designed for amplifiers, oscillators and mixers |
Motorola |
| 27 |
2N3375 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
| 28 |
2N3553 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
| 29 |
2N3632 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
| 30 |
2N381 |
PNP germanium transistor for small-signal audio amplifiers, Class B push-pull output stages and medium-speed switching circuits |
Motorola |
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