| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BAS40 |
-Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping) |
Siemens |
| 2 |
BAS40 |
-Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping) |
Siemens |
| 3 |
BAS40 |
-Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping) |
Siemens |
| 4 |
BAS70 |
-Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) |
Siemens |
| 5 |
BAS70 |
-Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) |
Siemens |
| 6 |
BAT17 |
-Silicon Schottky Diode (For mixer applications in the VHF/UHF range For high-speed switching) |
Siemens |
| 7 |
BAT17 |
-Silicon Schottky Diode (For mixer applications in the VHF/UHF range For high-speed switching) |
Siemens |
| 8 |
BAT18 |
-Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) |
Siemens |
| 9 |
BAT18 |
-Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) |
Siemens |
| 10 |
BAT68 |
-Silicon Schottky Diodes (For mixer applications in the VHF/UHF range For high-speed switching) |
Siemens |
| 11 |
BAT68 |
-Silicon Schottky Diodes (For mixer applications in the VHF/UHF range For high-speed switching) |
Siemens |
| 12 |
Gegenzellen-/-Silicon-Back-Off-Diodes |
Gegenzellen / Silicon Back-Off-Diodes |
Diodes |
| 13 |
KTY19 |
-Silicon Spreading Resistance Temperature Sensor in Robust Threaded Metal Housing |
Siemens |
| 14 |
KTY19 |
-Silicon Spreading Resistance Temperature Sensor in Robust Threaded Metal Housing |
Siemens |
| 15 |
Q62702-P836 |
Mini-Silicon NPN Phototransistor |
Siemens |
| 16 |
Q62702-P848 |
Mini-Silicon NPN Phototransistor |
Siemens |
| 17 |
Q62702-P849 |
Mini-Silicon NPN Phototransistor |
Siemens |
| 18 |
SFH305 |
Mini-Silicon NPN Phototransistor |
Siemens |
| 19 |
SFH305-2 |
Mini-silicon NPN phototransistor |
Siemens |
| 20 |
SFH305-3 |
Mini-silicon NPN phototransistor |
Siemens |
| 21 |
W6NRD0X-0000 |
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 22 |
W6NRE0X-0000 |
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 23 |
W6NXD0K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 24 |
W6NXD0KLSR-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 25 |
W6NXD3J-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 26 |
W6NXD3K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 27 |
W6NXD3L-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 28 |
W6PXD3O-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
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