| No. |
Part Name |
Description |
Manufacturer |
| 1 |
ACMD-7401-TR1 |
Miniature PCS Band Duplexer |
Agilent (Hewlett-Packard) |
| 2 |
AT-30511-TR1 |
Low Current, High Performance NPN Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
| 3 |
AT-30533-TR1 |
Low Current, High Performance NPN Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
| 4 |
AT-31011-TR1 |
Low Current, High Performance NPN Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
| 5 |
AT-31033-TR1 |
Low Current, High Performance NPN Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
| 6 |
AT-31625-TR1 |
4.8 V NPN Common Emitter Medium Power Output Transistor |
Agilent (Hewlett-Packard) |
| 7 |
AT-32011-TR1 |
Low Current, High Performance NPN Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
| 8 |
AT-32032-TR1 |
AT32032 |
Agilent (Hewlett-Packard) |
| 9 |
AT-32033-TR1 |
Low Current, High Performance NPN Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
| 10 |
AT-32063-TR1 |
Low Current, High Performance NPN Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
| 11 |
AT-33225-TR1 |
4.8 V NPN Common Emitter Output Power Transistor for AMPS, ETACS Phones |
Agilent (Hewlett-Packard) |
| 12 |
AT-36408-TR1 |
4.8 V NPN Common Emitter Output Power Transistor for GSM Class IV Phones |
Agilent (Hewlett-Packard) |
| 13 |
AT-38086-TR1 |
4.8 V NPN Silicon Bipolar Common Emitter Transistor |
Agilent (Hewlett-Packard) |
| 14 |
AT-41411-TR1 |
Surface Mount Low Noise Silicon Bipolar Transistor Chip |
Agilent (Hewlett-Packard) |
| 15 |
AT-41486-TR1 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
| 16 |
AT-41511-TR1 |
General Purpose, Low Noise NPN Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
| 17 |
AT-41532-TR1 |
NPN SILICON TRANSISTOR |
Agilent (Hewlett-Packard) |
| 18 |
AT-41533-TR1 |
General Purpose, Low Noise NPN Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
| 19 |
AT-41586-TR1 |
Low Cost General Purpose Transistors |
Agilent (Hewlett-Packard) |
| 20 |
AT-42086-TR1 |
Up to 6 GHz Medium Power Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
| 21 |
ATF-10136-TR1 |
0.5-12 GHz Low Noise Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 22 |
ATF-10236-TR1 |
0.5-12 GHz Low Noise Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 23 |
ATF-10736-TR1 |
0.5-12 GHz General Purpose Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 24 |
ATF-13336-TR1 |
2-16 GHz Low Noise Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 25 |
ATF-13736-TR1 |
2-16 GHz Low Noise Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 26 |
ATF-13786-TR1 |
Surface Mount Gallium Arsenide FET for Oscillators |
Agilent (Hewlett-Packard) |
| 27 |
ATF-21186-TR1 |
0.5-6 GHz General Purpose Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 28 |
ATF-26836-TR1 |
2-16 GHz General Purpose Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 29 |
ATF-26884-TR1 |
2-16 GHz General Purpose Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 30 |
ATF-33143-TR1 |
Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
Agilent (Hewlett-Packard) |
| | | |
