| No. |
Part Name |
Description |
Manufacturer |
| 1 |
K4H510838C-UCCC |
512Mb C-die DDR SDRAM Specification |
Samsung Electronic |
| 2 |
K4H511638C-UCCC |
512Mb C-die DDR SDRAM Specification |
Samsung Electronic |
| 3 |
K4H560838F-UCC4 |
256Mb F-die DDR400 SDRAM Specification |
Samsung Electronic |
| 4 |
K4H560838F-UCCC |
256Mb F-die DDR400 SDRAM Specification |
Samsung Electronic |
| 5 |
K4H561638F-UCC4 |
256Mb F-die DDR400 SDRAM Specification |
Samsung Electronic |
| 6 |
K4H561638F-UCCC |
256Mb F-die DDR400 SDRAM Specification |
Samsung Electronic |
| 7 |
UT54LVDS031-UCC |
Quad driver. Lead finish gold. |
Aeroflex Circuit Technology |
| 8 |
UT54LVDS031LV-UCC |
Low voltage quad driver. Lead finish gold. |
Aeroflex Circuit Technology |
| 9 |
UT54LVDS032-UCC |
Quad receiver. Lead finish gold. |
Aeroflex Circuit Technology |
| 10 |
UT54LVDS032LV-UCC |
Low voltage quad receiver. Lead finish gold. |
Aeroflex Circuit Technology |
| 11 |
UT54LVDS032LVT-UCC |
Low voltage quad receiver with integrated termination resistor. Lead finish gold. |
Aeroflex Circuit Technology |
| 12 |
UT54LVDS217-UCC |
Serializer. Lead finish gold. |
Aeroflex Circuit Technology |
| 13 |
UT54LVDSC031-UCC |
LVDS quad driver. Lead finish gold. |
Aeroflex Circuit Technology |
| 14 |
UT54LVDSC032-UCC |
LVDS quad receiver. Lead finish gold. |
Aeroflex Circuit Technology |
| 15 |
UT7Q512K-UCC |
512K x 8 SRAM. 100ns access time, 5V operation. Military temperature range flow. Lead finish gold. |
Aeroflex Circuit Technology |
| 16 |
UT8Q512-UCC |
512K x 8 SRAM. 25ns access time, 3.3V operation. Lead finish gold. Military temperature range flow. |
Aeroflex Circuit Technology |
| 17 |
UT9Q512-UCC |
512K x 8 SRAM MCM. 25ns access time, 5.0V operation. Lead finish gold. |
Aeroflex Circuit Technology |
| | | |
