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Datasheets for . 7

Datasheets found :: 259
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No. Part Name Description Manufacturer
1 2N5294 36.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 4.000A Ic, 30 - 120 hFE. Continental Device India Limited
2 2N5320 10.000W Switching NPN Metal Can Transistor. 75V Vceo, 2.000A Ic, 30 - 130 hFE. Continental Device India Limited
3 2N5492 Silicon N-P-N VERSAWATT transistor. 75V, 50W. General Electric Solid State
4 2N5493 Silicon N-P-N VERSAWATT transistor. 75V, 50W. General Electric Solid State
5 2N5496 50.000W General Purpose NPN Plastic Leaded Transistor. 70V Vceo, 7.000A Ic, 20 - 100 hFE Continental Device India Limited
6 2N6101 75.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 10.000A Ic, 20 - 80 hFE. Continental Device India Limited
7 2N6107 40.000W Medium Power PNP Plastic Leaded Transistor. 70V Vceo, 7.000A Ic, 2 hFE. Continental Device India Limited
8 2N6292 40.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 7.000A Ic, 2 hFE. Continental Device India Limited
9 2N6315 Power NPN silicon transistor. 7.0 A, 60 V, 90 W. Motorola
10 2N6316 Power NPN silicon transistor. 7.0 A, 80 V, 90 W. Motorola
11 2N6317 Power PNP silicon transistor. 7.0 A, 60 V, 90 W. Motorola
12 2N6318 Power PNP silicon transistor. 7.0 A, 80 V, 90 W. Motorola
13 2N6487 15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 70V. General Electric Solid State
14 2N6648 10 A P-N-P darlington power transistor. -40 V. 70 W. Gain of 1000 at 5 A. General Electric Solid State
15 2N6649 10 A P-N-P darlington power transistor. -60 V. 70 W. Gain of 1000 at 5 A. General Electric Solid State
16 2N6650 10 A P-N-P darlington power transistor. -80 V. 70 W. Gain of 1000 at 5 A. General Electric Solid State
17 5962H3829436BNA Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 75ns access time. QML class Q. Lead finish solder. Aeroflex Circuit Technology
18 5962H3829436BNC Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 75ns access time. QML class Q. Lead finish gold. Aeroflex Circuit Technology
19 5962H3829436BNX Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 75ns access time. QML class Q. Lead finish optional. Aeroflex Circuit Technology
20 5962H3829436BXA Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 75ns access time. QML class Q. Lead finish solder. Aeroflex Circuit Technology
21 5962H3829436BXC Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 75ns access time. QML class Q. Lead finish gold. Aeroflex Circuit Technology
22 5962H3829436BXX Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 75ns access time. QML class Q. Lead finish optional. Aeroflex Circuit Technology
23 5962H3829436SNA Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 75ns access time. QML class V. Lead finish solder. Aeroflex Circuit Technology
24 5962H3829436SNC Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 75ns access time. QML class V. Lead finish gold. Aeroflex Circuit Technology
25 5962H3829436SNX Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 75ns access time. QML class V. Lead finish optional. Aeroflex Circuit Technology
26 5962H3829436SXA Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 75ns access time. QML class V. Lead finish solder. Aeroflex Circuit Technology
27 5962H3829436SXC Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 75ns access time. QML class V. Lead finish gold. Aeroflex Circuit Technology
28 5962H3829436SXX Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 75ns access time. QML class V. Lead finish optional. Aeroflex Circuit Technology
29 5962R3829436BNA Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 75ns access time. QML class Q. Lead finish solder. Aeroflex Circuit Technology
30 5962R3829436BNC Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 75ns access time. QML class Q. Lead finish gold. Aeroflex Circuit Technology


Datasheets found :: 259
Page: | 1 | 2 | 3 | 4 | 5 |



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