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Datasheets for . 80

Datasheets found :: 189
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No. Part Name Description Manufacturer
1 2N1893 0.800W General Purpose NPN Metal Can Transistor. 80V Vceo, 0.500A Ic, 20 hFE. Continental Device India Limited
2 2N3019 0.800W General Purpose NPN Metal Can Transistor. 80V Vceo, A Ic, 50 hFE. Continental Device India Limited
3 2N3020 0.800W General Purpose NPN Metal Can Transistor. 80V Vceo, A Ic, 30 - 100 hFE. Continental Device India Limited
4 2N3496 0.400W General Purpose PNP Metal Can Transistor. 80V Vceo, 0.100A Ic, 35 hFE. Continental Device India Limited
5 2N3700 0.500W General Purpose NPN Metal Can Transistor. 80V Vceo, 1.000A Ic, 100 - 300 hFE. Continental Device India Limited
6 2N4031 0.800W RF PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 40 - 120 hFE. Continental Device India Limited
7 2N4033 0.800W RF PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 100 - 300 hFE. Continental Device India Limited
8 2N4236 6.000W General Purpose PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 40 hFE. Continental Device India Limited
9 2N4239 1.000W General Purpose NPN Metal Can Transistor. 80V Vceo, 1.000A Ic, 15 hFE. Continental Device India Limited
10 2N4900 Silicon P-N-P medium power transistor. 80V, 25W. General Electric Solid State
11 2N4923 30.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 30 - 150 hFE. Continental Device India Limited
12 2N5192 40.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 7 hFE. Continental Device India Limited
13 2N5294 Silicon N-P-N transistor. 80V, 36W. General Electric Solid State
14 2N5298 Silicon N-P-N transistor. 80V, 36W. General Electric Solid State
15 2N5303 High current, high power, high speed N-P-N power transistor. 80V, 200W. General Electric Solid State
16 2N5784 Silicon N-P-N epitaxial-base transistor. 80V, 10W. General Electric Solid State
17 2N5886 High-current, high-power, high-speed power transistor. 80V, 200W. General Electric Solid State
18 2N6036 40.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 100 hFE. Continental Device India Limited
19 2N6123 40.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 20 - 80 hFE. Continental Device India Limited
20 2N6123 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. General Electric Solid State
21 2N6126 40.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 20 - 80 hFE. Continental Device India Limited
22 2N6292 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. General Electric Solid State
23 2N6293 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. General Electric Solid State
24 2N6345A 12-A silicon triac. 800 V. General Electric Solid State
25 2N6349A 12-A silicon triac. 800 V. General Electric Solid State
26 2N6385 10 A N-P-N darlington power transistor. 80 V. 100 W. Gain of 1000 at 5 A. General Electric Solid State
27 2N6388 10 A N-P-N darlington power transistor. 80 V. 65 W. Gain of 1000 at 5 A. General Electric Solid State
28 2N6488 75.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 15.000A Ic, 20 - 150 hFE. Continental Device India Limited
29 2N6491 75.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 15.000A Ic, 20 - 150 hFE. Continental Device India Limited
30 2N6530 8 A N-P-N darlington power transistor. 80 V. 60 W. Gain of 1000 at 5 A. General Electric Solid State


Datasheets found :: 189
Page: | 1 | 2 | 3 | 4 | 5 |



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