No. |
Part Name |
Description |
Manufacturer |
1 |
1N5829 |
Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 20V. Vrsm = 24V. |
USHA India LTD |
2 |
1N5830 |
Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 30V. Vrsm = 36V. |
USHA India LTD |
3 |
1N5831 |
Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 40V. Vrsm = 48V. |
USHA India LTD |
4 |
1N5832 |
Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 20V. Vrsm = 24V. |
USHA India LTD |
5 |
1N5833 |
Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 30V. Vrsm = 36V. |
USHA India LTD |
6 |
1N5834 |
Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 40V. Vrsm = 48V. |
USHA India LTD |
7 |
2N3773 |
High power NPN transistor. High power audio and linear applications. Vceo = 140Vdc, Vcer = 150Vdc, Vcb = 160Vdc, Veb = 7Vdc, Ic = 16Adc, Ib = 4Adc, PD = 150W. |
USHA India LTD |
8 |
2N3773AR |
NPN silicon power transistor. 16Amp, 140V, 150Watt. High power audio, disk head positioners and other linear applications. Power switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. |
USHA India LTD |
9 |
2N4416 |
N-channel JFET. High frequency amplifier. |
Intersil |
10 |
2N4416A |
N-channel JFET. High frequency amplifier. |
Intersil |
11 |
2N5397 |
N-channel JFET. High frequency amplifier. |
Intersil |
12 |
2N5398 |
N-channel JFET. High frequency amplifier. |
Intersil |
13 |
2N5484 |
N-channel JFET. High frequency amplifier. |
Intersil |
14 |
2N5485 |
N-channel JFET. High frequency amplifier. |
Intersil |
15 |
2N5486 |
N-channel JFET. High frequency amplifier. |
Intersil |
16 |
2N5911 |
Dual N-channel JFET. High frequency amplifier. |
Intersil |
17 |
2N5911_D |
Dual N-channel JFET. High frequency amplifier. |
Intersil |
18 |
2N5911_W |
Dual N-channel JFET. High frequency amplifier. |
Intersil |
19 |
2N5912 |
Dual N-channel JFET. High frequency amplifier. |
Intersil |
20 |
2N5912_D |
Dual N-channel JFET. High frequency amplifier. |
Intersil |
21 |
2N5912_W |
Dual N-channel JFET. High frequency amplifier. |
Intersil |
22 |
2N6282 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. |
General Electric Solid State |
23 |
2N6283 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. |
General Electric Solid State |
24 |
2N6284 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. |
General Electric Solid State |
25 |
2N6285 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. |
General Electric Solid State |
26 |
2N6286 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. |
General Electric Solid State |
27 |
2N6287 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. |
General Electric Solid State |
28 |
2N6671 |
5 A SwitchMax power transistor. High voltage N-P-N type. |
General Electric Solid State |
29 |
2N6672 |
5 A SwitchMax power transistor. High voltage N-P-N type. |
General Electric Solid State |
30 |
2N6673 |
5 A SwitchMax power transistor. High voltage N-P-N type. |
General Electric Solid State |
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