| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N5370B |
Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 56V, Izt =20mA |
Panjit International Inc |
| 2 |
1N5380B |
Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 120V, Izt =10mA |
Panjit International Inc |
| 3 |
1SMC5384 |
Surface mount silicon zener diode. Power 5.0 Watts. Nominal zener voltage Vz = 160 V. Test current Izt = 8 mA. |
Panjit International Inc |
| 4 |
2N3375 |
R.F. power transistor |
Mullard |
| 5 |
2N3553 |
R.F. power transistor |
Mullard |
| 6 |
2N3632 |
R.F. power transistor |
Mullard |
| 7 |
2N3773AR |
NPN silicon power transistor. 16Amp, 140V, 150Watt. High power audio, disk head positioners and other linear applications. Power switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. |
USHA India LTD |
| 8 |
2N3866 |
R.F. power transistor |
Mullard |
| 9 |
2N4427 |
R.F. power transistor |
Mullard |
| 10 |
2SA1803 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE. POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 11 |
2SA1869 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE. POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 12 |
2SA1939 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE. POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 13 |
2SB1018A |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. |
TOSHIBA |
| 14 |
2SB1578 |
Low freq. power amp., medium-speed switching transistor |
NEC |
| 15 |
2SB1602 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE. POWER AMPLIFIER APPLICATIONS. |
TOSHIBA |
| 16 |
2SC4688 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 17 |
2SC4935 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) . POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 18 |
2SC5000 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE . POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 19 |
2SC5196 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE . POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 20 |
2SC830 |
Silicon NPN Triple Diffused Transistor, intended for use in HiFi Amp. Power Output |
Hitachi Semiconductor |
| 21 |
2SD1091 |
Si NPN triple diffused planar darlington. Power amplifier. |
Panasonic |
| 22 |
2SD1509 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (DARLINGTON) MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS, SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. |
TOSHIBA |
| 23 |
2SD1843 |
Low-freq. power amp., low-speed switching power tr. |
NEC |
| 24 |
2SD1843-T |
Low-freq. power amp., low-speed switching power tr. |
NEC |
| 25 |
2SD2425 |
Low freq. power amp., medium-speed switching transistor |
NEC |
| 26 |
2SD553 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 27 |
2SD804 |
Si NPN triple diffused junction mesa. Power amplifier. |
Panasonic |
| 28 |
2SD866A |
Si NPN epitaxial planar. Power switching. |
Panasonic |
| 29 |
379BLY |
R.F. power transistor |
Mullard |
| 30 |
380BGY |
Broad band R.F. power module |
Mullard |
| | | |
