| No. |
Part Name |
Description |
Manufacturer |
| 1 |
50S116T-5 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA |
Ceramate |
| 2 |
50S116T-6 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA |
Ceramate |
| 3 |
50S116T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA |
Ceramate |
| 4 |
54S416T-5 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA |
Ceramate |
| 5 |
54S416T-6 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA |
Ceramate |
| 6 |
54S416T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA |
Ceramate |
| 7 |
ACT-F128K8N-060F6Q |
High speed 1 Megabit monolithic FLASH. Speed 60ns. |
Aeroflex Circuit Technology |
| 8 |
ACT-F128K8N-060F7Q |
High speed 1 Megabit monolithic FLASH. Speed 60ns. |
Aeroflex Circuit Technology |
| 9 |
ACT-F128K8N-060P4Q |
High speed 1 Megabit monolithic FLASH. Speed 60ns. |
Aeroflex Circuit Technology |
| 10 |
ACT-F128K8N-070F6Q |
High speed 1 Megabit monolithic FLASH. Speed 70ns. |
Aeroflex Circuit Technology |
| 11 |
ACT-F128K8N-070F7Q |
High speed 1 Megabit monolithic FLASH. Speed 70ns. |
Aeroflex Circuit Technology |
| 12 |
ACT-F128K8N-070P4Q |
High speed 1 Megabit monolithic FLASH. Speed 70ns. |
Aeroflex Circuit Technology |
| 13 |
ACT-F128K8N-090F6Q |
High speed 1 Megabit monolithic FLASH. Speed 90ns. |
Aeroflex Circuit Technology |
| 14 |
ACT-F128K8N-090F7Q |
High speed 1 Megabit monolithic FLASH. Speed 90ns. |
Aeroflex Circuit Technology |
| 15 |
ACT-F128K8N-090P4Q |
High speed 1 Megabit monolithic FLASH. Speed 90ns. |
Aeroflex Circuit Technology |
| 16 |
ACT-F128K8N-120F6Q |
High speed 1 Megabit monolithic FLASH. Speed 120ns. |
Aeroflex Circuit Technology |
| 17 |
ACT-F128K8N-120F7Q |
High speed 1 Megabit monolithic FLASH. Speed 120ns. |
Aeroflex Circuit Technology |
| 18 |
ACT-F128K8N-120P4Q |
High speed 1 Megabit monolithic FLASH. Speed 120ns. |
Aeroflex Circuit Technology |
| 19 |
ACT-F128K8N-150F6Q |
High speed 1 Megabit monolithic FLASH. Speed 150ns. |
Aeroflex Circuit Technology |
| 20 |
ACT-F128K8N-150F7Q |
High speed 1 Megabit monolithic FLASH. Speed 150ns. |
Aeroflex Circuit Technology |
| 21 |
ACT-F128K8N-150P4Q |
High speed 1 Megabit monolithic FLASH. Speed 150ns. |
Aeroflex Circuit Technology |
| 22 |
ACT-PS512K8N-010L2I |
High speed 4 Megabit plastic monolithic SRAM. Options none. Speed 10ns. |
Aeroflex Circuit Technology |
| 23 |
ACT-PS512K8W-012L2I |
High speed 4 Megabit plastic monolithic SRAM. Options burn-in. Speed 12ns. |
Aeroflex Circuit Technology |
| 24 |
ACT-PS512K8X-015L2T |
High speed 4 Megabit plastic monolithic SRAM. Options temp cycle. Speed 15ns. |
Aeroflex Circuit Technology |
| 25 |
ACT-PS512K8Y-017L2T |
High speed 4 Megabit plastic monolithic SRAM. Options temp cycle & burn-in. Speed 17ns. |
Aeroflex Circuit Technology |
| 26 |
ACT-PS512K8Y-020L2T |
High speed 4 Megabit plastic monolithic SRAM. Options temp cycle & burn-in. Speed 20ns. |
Aeroflex Circuit Technology |
| 27 |
ACT-PS512K8Y-025L2T |
High speed 4 Megabit plastic monolithic SRAM. Options temp cycle & burn-in. Speed 25ns. |
Aeroflex Circuit Technology |
| 28 |
AT17LV002-10JC |
2 Mbit CPLD boot EEPROM. Speed 15 MHz. |
Cypress |
| 29 |
AT17LV002-10JI |
2 Mbit CPLD boot EEPROM. Speed 10 MHz. |
Cypress |
| 30 |
AT17LV010-10JC |
1 Mbit CPLD boot EEPROM. Speed 15 MHz. |
Cypress |
| | | |
