| No. |
Part Name |
Description |
Manufacturer |
| 1 |
7111 |
T-3/4 subminiature, bi-pin lamp. 2.5 volts, 0.110 amps. |
Gilway Technical Lamp |
| 2 |
7121 |
T-3/4 subminiature, miniature flanged lamp. 2.5 volts, 0.110 amps. |
Gilway Technical Lamp |
| 3 |
APT6011B2VFR |
POWER MOS V 600V 49A 0.110 Ohm |
Advanced Power Technology |
| 4 |
APT6011LVFR |
POWER MOS V 600V 49A 0.110 Ohm |
Advanced Power Technology |
| 5 |
APT6011LVR |
POWER MOS V 600V 49A 0.110 Ohm |
Advanced Power Technology |
| 6 |
APT8011JFLL |
POWER MOS 7 800V 51A 0.110 Ohm |
Advanced Power Technology |
| 7 |
APT8011JLL |
POWER MOS 7 800V 51A 0.110 Ohm |
Advanced Power Technology |
| 8 |
FSF250 |
24A/ 200V/ 0.110 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs |
Intersil |
| 9 |
FSF250D |
24A/ 200V/ 0.110 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs |
Intersil |
| 10 |
FSF250D1 |
24A/ 200V/ 0.110 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs |
Intersil |
| 11 |
FSF250D3 |
24A/ 200V/ 0.110 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs |
Intersil |
| 12 |
FSF250R |
24A/ 200V/ 0.110 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs |
Intersil |
| 13 |
FSF250R1 |
24A/ 200V/ 0.110 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs |
Intersil |
| 14 |
FSF250R3 |
24A/ 200V/ 0.110 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs |
Intersil |
| 15 |
FSF250R4 |
24A/ 200V/ 0.110 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs |
Intersil |
| 16 |
HUF75829D3 |
18A, 150V, 0.110 Ohm, N-Channel, UltraFET� Power MOSFET |
Fairchild Semiconductor |
| 17 |
HUF75829D3 |
18A/ 150V/ 0.110 Ohm/ N-Channel/ UltraFET Power MOSFET |
Intersil |
| 18 |
HUF75829D3S |
18A, 150V, 0.110 Ohm, N-Channel, UltraFET� Power MOSFET |
Fairchild Semiconductor |
| 19 |
HUF75829D3S |
18A/ 150V/ 0.110 Ohm/ N-Channel/ UltraFET Power MOSFET |
Intersil |
| 20 |
HUF75829D3ST |
18A, 150V, 0.110 Ohm, N-Channel,UltraFET Power MOSFET |
Fairchild Semiconductor |
| 21 |
HUFA75829D3 |
18A, 150V, 0.110 Ohm, N-Channel, UltraFET� Power MOSFETs |
Fairchild Semiconductor |
| 22 |
HUFA75829D3S |
18A, 150V, 0.110 Ohm, N-Channel, UltraFET� Power MOSFETs |
Fairchild Semiconductor |
| 23 |
HUFA75829D3ST |
18A, 150V, 0.110 Ohm, N-Channel, UltraFET Power MOSFETs |
Fairchild Semiconductor |
| 24 |
JANSR2N7406 |
24A/ 200V/ 0.110 Ohm/ Rad Hard/ N-Channel Power MOSFET |
Intersil |
| 25 |
MAX6715UTTGD3-T |
Vcc1: 3.075 V, Vcc2: 1.110 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 26 |
MAX6715UTWGD3-T |
Vcc1: 1.665 V, Vcc2: 1.110 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 27 |
MAX6715UTZGD3-T |
Vcc1: 2.313 V, Vcc2: 1.110 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 28 |
MAX6716UTTGD3-T |
Vcc1: 3.075 V, Vcc2: 1.110 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 29 |
MAX6716UTWGD3-T |
Vcc1: 1.665 V, Vcc2: 1.110 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 30 |
MAX6716UTZGD3-T |
Vcc1: 2.313 V, Vcc2: 1.110 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
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