| No. |
Part Name |
Description |
Manufacturer |
| 1 |
AD605AR-REEL |
6.5V; 1.2-1.4W; dual, low-noise, single-supply variable gain amplifier. For ultrasound and sonar time-gain control, high performance AGC systems |
Analog Devices |
| 2 |
AD605AR-REEL7 |
6.5V; 1.2-1.4W; dual, low-noise, single-supply variable gain amplifier. For ultrasound and sonar time-gain control, high performance AGC systems |
Analog Devices |
| 3 |
AD605BR-REEL |
6.5V; 1.2-1.4W; dual, low-noise, single-supply variable gain amplifier. For ultrasound and sonar time-gain control, high performance AGC systems |
Analog Devices |
| 4 |
AD605BR-REEL7 |
6.5V; 1.2-1.4W; dual, low-noise, single-supply variable gain amplifier. For ultrasound and sonar time-gain control, high performance AGC systems |
Analog Devices |
| 5 |
MAAM12000 |
1.2-1.75 GHz, low noise GaAs MMIC amplifier |
MA-Com |
| 6 |
MAAM12000 |
Low Noise GaAs MMIC Amplifier 1.2-1.75 GHz |
Tyco Electronics |
| 7 |
MRA1214-55H |
Microwave Pulse Power Transistor 1.2-1.4GHz 50W |
Motorola |
| 8 |
SD1501 |
1.2-1.4GHz 30W 35V RF transistor designed for use in long pulse L-BAND applications like radar, JTIDS, etc. |
SGS Thomson Microelectronics |
| 9 |
SD1504 |
1.2-1.4GHz 50W 45V RF NPN transistor, designed for high power pulse at L-Band |
SGS Thomson Microelectronics |
| 10 |
SD1505 |
1.2-1.4GHz 150W 50V RF transistor designed for high power pulse at L-BAND |
SGS Thomson Microelectronics |
| 11 |
SD1507 |
1.2-1.4GHz 285W 50V RF transistor designed for High Power pulse at L-BAND |
SGS Thomson Microelectronics |
| | | |
