| No. |
Part Name |
Description |
Manufacturer |
| 1 |
GMS81C4060 |
ROM/RAM size:60 Kb/1.536 bytes,4.5 V-5.5 V, 4-16 MHz, CMOS single-chip 8-bit microcontroller for television |
Hynix Semiconductor |
| 2 |
HM53461P-10 |
100ns; V(cc): -0.5 to +7.0V; 50mA; 1W; 65.536-word x 4-bit multiport CMOS video RAM |
Hitachi Semiconductor |
| 3 |
HM53461P-12 |
120ns; V(cc): -0.5 to +7.0V; 50mA; 1W; 65.536-word x 4-bit multiport CMOS video RAM |
Hitachi Semiconductor |
| 4 |
HM53461P-15 |
150ns; V(cc): -0.5 to +7.0V; 50mA; 1W; 65.536-word x 4-bit multiport CMOS video RAM |
Hitachi Semiconductor |
| 5 |
HM53461ZP-10 |
100ns; V(cc): -0.5 to +7.0V; 50mA; 1W; 65.536-word x 4-bit multiport CMOS video RAM |
Hitachi Semiconductor |
| 6 |
HM53461ZP-12 |
120ns; V(cc): -0.5 to +7.0V; 50mA; 1W; 65.536-word x 4-bit multiport CMOS video RAM |
Hitachi Semiconductor |
| 7 |
HM53461ZP-15 |
150ns; V(cc): -0.5 to +7.0V; 50mA; 1W; 65.536-word x 4-bit multiport CMOS video RAM |
Hitachi Semiconductor |
| 8 |
HMS87C4060 |
ROM/RAM size: 60 K/1.536 bytes, 4.5-5.5 V , 4-8 MHz,8-bit single-chip microcontroller |
Hynix Semiconductor |
| 9 |
SMJ4464 |
5V supply (10% tolerance); 50mA; 1W; 65.536-word by 4-bit dynamic random-access memory |
Texas Instruments |
| 10 |
SMJ4464-12 |
120ns; 5V supply (10% tolerance); 50mA; 1W; 65.536-word by 4-bit dynamic random-access memory |
Texas Instruments |
| 11 |
SMJ4464-15 |
150ns; 5V supply (10% tolerance); 50mA; 1W; 65.536-word by 4-bit dynamic random-access memory |
Texas Instruments |
| 12 |
SMJ4464-20 |
200ns; 5V supply (10% tolerance); 50mA; 1W; 65.536-word by 4-bit dynamic random-access memory |
Texas Instruments |
| 13 |
TC55465AJ-15 |
15ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 14 |
TC55465AJ-20 |
20ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 15 |
TC55465AJ-25 |
25ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 16 |
TC55465AJ-35 |
35ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 17 |
TC55465AP-20 |
20ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 18 |
TC55465AP-25 |
25ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 19 |
TC55465AP-35 |
35ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 20 |
TCM29C13ADWR |
u-law and A-law, 1.536, 1.544, 2.048 MHz, Enhanced Noise Reduction 20-SOIC 0 to 70 |
Texas Instruments |
| 21 |
TCM29C13DWR |
u-law and A-law, 1.536, 1.544, 2.048 MHz 20-SOIC |
Texas Instruments |
| 22 |
TCM29C14ADWR |
u-law and A-law, 1.536, 1.544, 2.048 MHz, Enhanced Noise Reduction, 8th-Bit Signaling 24-SOIC |
Texas Instruments |
| 23 |
TCM29C14DWR |
u-law and A-law, 1.536, 1.544, 2.048 MHz, 8th-Bit Signaling 24-SOIC |
Texas Instruments |
| 24 |
TCM37C14AIDW |
u-law and A-law, 1.536, 1.544, 2.048 MHz, Programmable Gain, Enhanced Noise Reduction 24-SOIC -40 to 85 |
Texas Instruments |
| 25 |
TCM37C14AIDWR |
u-law and A-law, 1.536, 1.544, 2.048 MHz, Programmable Gain, Enhanced Noise Reduction 24-SOIC -40 to 85 |
Texas Instruments |
| 26 |
TP13054ADW |
u-law, Single-Ended Output, 1.536, 1.544, 2.048 MHz |
Texas Instruments |
| 27 |
TP13054ADWR |
u-law, Single-Ended Output, 1.536, 1.544, 2.048 MHz |
Texas Instruments |
| 28 |
TP13054AN |
u-law, Single-Ended Output, 1.536, 1.544, 2.048 MHz |
Texas Instruments |
| 29 |
TP13054BDW |
u-law, Single-Ended Output, 1.536, 1.544, 2.048 MHz, Enhanced Noise Reduction |
Texas Instruments |
| 30 |
TP13054BDWR |
u-law, Single-Ended Output, 1.536, 1.544, 2.048 MHz, Enhanced Noise Reduction |
Texas Instruments |
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