| No. |
Part Name |
Description |
Manufacturer |
| 1 |
APT12067B2LL |
POWER MOS 7 1200V 18A 0.670 Ohm |
Advanced Power Technology |
| 2 |
APT12067JLL |
POWER MOS 7 1200V 17A 0.670 Ohm |
Advanced Power Technology |
| 3 |
APT12067LLL |
POWER MOS 7 1200V 18A 0.670 Ohm |
Advanced Power Technology |
| 4 |
APT8067HVR |
POWER MOS V 800V 11.5A 0.670 Ohm |
Advanced Power Technology |
| 5 |
CL8036 |
CW/Pulsed FET Oscillator operating in X-band 10.670 GHz |
Philips |
| 6 |
CL8066 |
C.W./Pulsed Doppler Module, centre frequency 10.670 GHz |
Philips |
| 7 |
FSL923A0D |
5A/ -200V/ 0.670 Ohm/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs |
Intersil |
| 8 |
FSL923A0D1 |
5A/ -200V/ 0.670 Ohm/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs |
Intersil |
| 9 |
FSL923A0D3 |
5A/ -200V/ 0.670 Ohm/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs |
Intersil |
| 10 |
FSL923A0R |
5A/ -200V/ 0.670 Ohm/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs |
Intersil |
| 11 |
FSL923A0R1 |
5A/ -200V/ 0.670 Ohm/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs |
Intersil |
| 12 |
FSL923A0R3 |
5A/ -200V/ 0.670 Ohm/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs |
Intersil |
| 13 |
FSL923A0R4 |
5A/ -200V/ 0.670 Ohm/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs |
Intersil |
| 14 |
HL6724MG |
The HL6724MG is a 0.67 ?m band AlGaInP laser diode with a multi-quantum well (MQW) structure. |
Hitachi Semiconductor |
| 15 |
ICX432DQ |
Diagonal 6.67mm(Type 1/2.7) Frame Readout CCD |
SONY |
| 16 |
ICX432DQF |
Diagonal 6.67mm(Type 1/2.7) Frame Readout CCD |
SONY |
| 17 |
ISFPSMOC-48IRMETAL |
Transceivers by Form-factor MSA - iSFP Trx for Multirate Applications up to 2.67 Gbit/s, LC Connector, 1300 nm, 15 km |
Infineon |
| 18 |
J503 |
Diode Current Reg. 50V 0.672mA 2-Pin TO-92 |
New Jersey Semiconductor |
| 19 |
LM1211N |
15 V, 1.67 W, broadband demodulator system |
National Semiconductor |
| 20 |
MAX3882 |
2.488Gbps/2.67Gbps 1:4 Demultiplexer with Clock and Data Recovery and Limiting Amplifier |
MAXIM - Dallas Semiconductor |
| 21 |
MAX6381XR17D1-T |
1.67 V, 1 ms, SC70, single/dual low-voltage, low-power mP reset circuit |
MAXIM - Dallas Semiconductor |
| 22 |
MAX6381XR17D2-T |
1.67 V, 20 ms, SC70, single/dual low-voltage, low-power mP reset circuit |
MAXIM - Dallas Semiconductor |
| 23 |
MAX6381XR17D3-T |
1.67 V, 140 ms, SC70, single/dual low-voltage, low-power mP reset circuit |
MAXIM - Dallas Semiconductor |
| 24 |
MAX6381XR17D4-T |
1.67 V, 1120 ms, SC70, single/dual low-voltage, low-power mP reset circuit |
MAXIM - Dallas Semiconductor |
| 25 |
MAX6381XR17D5-T |
1.67 V, 280 ms, SC70, single/dual low-voltage, low-power mP reset circuit |
MAXIM - Dallas Semiconductor |
| 26 |
MAX6381XR17D6-T |
1.67 V, 560 ms, SC70, single/dual low-voltage, low-power mP reset circuit |
MAXIM - Dallas Semiconductor |
| 27 |
MAX6381XR17D7-T |
1.67 V, 1200 ms, SC70, single/dual low-voltage, low-power mP reset circuit |
MAXIM - Dallas Semiconductor |
| 28 |
MAX6382XR17D1-T |
1.67 V, 1 ms, SC70, single/dual low-voltage, low-power mP reset circuit |
MAXIM - Dallas Semiconductor |
| 29 |
MAX6382XR17D2-T |
1.67 V, 20 ms, SC70, single/dual low-voltage, low-power mP reset circuit |
MAXIM - Dallas Semiconductor |
| 30 |
MAX6382XR17D3-T |
1.67 V, 140 ms, SC70, single/dual low-voltage, low-power mP reset circuit |
MAXIM - Dallas Semiconductor |
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