| No. |
Part Name |
Description |
Manufacturer |
| 1 |
APT6070BNR |
V(dss): 600V; 12.0A; 0.70 Ohm; N-channel enhancement mode high voltage power MOSFET |
Advanced Power Technology |
| 2 |
FRM234D |
7A/ 250V/ 0.70 Ohm/ Rad Hard/ N-Channel Power MOSFETs |
Intersil |
| 3 |
FRM234H |
7A/ 250V/ 0.70 Ohm/ Rad Hard/ N-Channel Power MOSFETs |
Intersil |
| 4 |
FRM234R |
7A/ 250V/ 0.70 Ohm/ Rad Hard/ N-Channel Power MOSFETs |
Intersil |
| 5 |
FSS430D |
3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
Intersil |
| 6 |
FSS430D1 |
3A/ 500V/ 2.70 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs |
Intersil |
| 7 |
FSS430D3 |
3A/ 500V/ 2.70 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs |
Intersil |
| 8 |
FSS430R |
3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
Intersil |
| 9 |
FSS430R1 |
3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
Intersil |
| 10 |
FSS430R3 |
3A/ 500V/ 2.70 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs |
Intersil |
| 11 |
FSS430R4 |
3A/ 500V/ 2.70 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs |
Intersil |
| 12 |
IRF9241 |
-9A and -11A, -150V and -200V, 0.50 and 0.70 Ohm, P-Channel Power MOSFETs |
Intersil |
| 13 |
IRF9242 |
-9A and -11A, -150V and -200V, 0.50 and 0.70 Ohm, P-Channel Power MOSFETs |
Intersil |
| 14 |
IRF9243 |
-9A and -11A, -150V and -200V, 0.50 and 0.70 Ohm, P-Channel Power MOSFETs |
Intersil |
| 15 |
JANSR2N7402 |
3A/ 500V/ 2.70 Ohm/ Rad Hard/ N-Channel Power MOSFET |
Intersil |
| 16 |
K9F1208Q0A-DCB0 |
64M x 8 bit NAND flash memory, 1.70 - 1.95V |
Samsung Electronic |
| 17 |
K9F1208Q0A-DIB0 |
64M x 8 bit NAND flash memory, 1.70 - 1.95V |
Samsung Electronic |
| 18 |
K9F1208Q0A-HCB0 |
64M x 8 bit NAND flash memory, 1.70 - 1.95V |
Samsung Electronic |
| 19 |
K9F1208Q0A-HIB0 |
64M x 8 bit NAND flash memory, 1.70 - 1.95V |
Samsung Electronic |
| 20 |
K9F1216Q0A-DCB0 |
32M x 16 bit NAND flash memory, 1.70 - 1.95V |
Samsung Electronic |
| 21 |
K9F1216Q0A-DIB0 |
32M x 16 bit NAND flash memory, 1.70 - 1.95V |
Samsung Electronic |
| 22 |
K9F1216Q0A-HCB0 |
32M x 16 bit NAND flash memory, 1.70 - 1.95V |
Samsung Electronic |
| 23 |
K9F1216Q0A-HIB0 |
32M x 16 bit NAND flash memory, 1.70 - 1.95V |
Samsung Electronic |
| 24 |
MAS9162AST9-T |
80 mA LDO voltage regulator IC. 2.70 V. |
mas MICRO ANALOG SYSTEMS |
| 25 |
MAX6323AUT26-T |
2.70 V, mP supervisory circuit with windowed (min/max) watchdog and manual reset |
MAXIM - Dallas Semiconductor |
| 26 |
MAX6323BUT26-T |
2.70 V, mP supervisory circuit with windowed (min/max) watchdog and manual reset |
MAXIM - Dallas Semiconductor |
| 27 |
MAX6323CUT26-T |
2.70 V, mP supervisory circuit with windowed (min/max) watchdog and manual reset |
MAXIM - Dallas Semiconductor |
| 28 |
MAX6323DUT26-T |
2.70 V, mP supervisory circuit with windowed (min/max) watchdog and manual reset |
MAXIM - Dallas Semiconductor |
| 29 |
MAX6323EUT26-T |
2.70 V, mP supervisory circuit with windowed (min/max) watchdog and manual reset |
MAXIM - Dallas Semiconductor |
| 30 |
MAX6323FUT26-T |
2.70 V, mP supervisory circuit with windowed (min/max) watchdog and manual reset |
MAXIM - Dallas Semiconductor |
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