| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N4786 |
Diode VAR Cap Single 28V 6.8pF 2-Pin DO-7 |
New Jersey Semiconductor |
| 2 |
1N4786A |
Diode VAR Cap Single 28V 6.8pF 2-Pin DO-7 |
New Jersey Semiconductor |
| 3 |
1N4801 |
Diode VAR Cap Single 110V 6.8pF 2-Pin DO-7 |
New Jersey Semiconductor |
| 4 |
1N4801B |
Diode VAR Cap Single 110V 6.8pF 2-Pin DO-7 |
New Jersey Semiconductor |
| 5 |
1N5139B |
Diode VAR Cap Single 65V 6.8pF 2-Pin DO-7 |
New Jersey Semiconductor |
| 6 |
1N5141 |
Diode VAR Cap Single 60V 10.8pF 2-Pin DO-7 |
New Jersey Semiconductor |
| 7 |
1N5144 |
Diode VAR Cap Single 60V 19.8pF 2-Pin DO-7 |
New Jersey Semiconductor |
| 8 |
1N5441 |
Diode VAR Cap Single 30V 6.8pF 2-Pin DO-7 |
New Jersey Semiconductor |
| 9 |
1N5441A |
Diode VAR Cap Single 30V 6.8pF 2-Pin DO-7 |
New Jersey Semiconductor |
| 10 |
1N5441B |
Diode VAR Cap Single 30V 6.8pF 2-Pin DO-7 |
New Jersey Semiconductor |
| 11 |
1N5441C |
Diode VAR Cap Single 30V 6.8pF 2-Pin DO-7 |
New Jersey Semiconductor |
| 12 |
1N5441D |
Diode VAR Cap Single 30V 6.8pF 2-Pin DO-7 |
New Jersey Semiconductor |
| 13 |
1N5461 |
Diode VAR Cap Single 30V 6.8pF 2-Pin DO-7 |
New Jersey Semiconductor |
| 14 |
1N5461A |
Diode VAR Cap Single 30V 6.8pF 2-Pin DO-7 |
New Jersey Semiconductor |
| 15 |
1N5461B |
Diode VAR Cap Single 30V 6.8pF 2-Pin DO-7 |
New Jersey Semiconductor |
| 16 |
1N5461C |
Diode VAR Cap Single 30V 6.8pF 2-Pin DO-7 |
New Jersey Semiconductor |
| 17 |
1N5461D |
Diode VAR Cap Single 30V 6.8pF 2-Pin DO-7 |
New Jersey Semiconductor |
| 18 |
1N5681 |
Diode VAR Cap Single 45V 6.8pF 2-Pin DO-7 |
New Jersey Semiconductor |
| 19 |
1N5681A |
Diode VAR Cap Single 30V 6.8pF 2-Pin DO-7 |
New Jersey Semiconductor |
| 20 |
MMBV2101L |
Silicon voltage variable capacitance (EPICAP) diode, 30 Volts 6.8pF |
Motorola |
| 21 |
MV1620 |
Silicon Epicap diode, epitaxial passivated tuning diode designed for AFC applications in radio, TV, 6.8pF |
Motorola |
| 22 |
MV1864A |
Silicon Epicap diode designed for electronic tuning and control applications in the UHF and lower microwave frequency 6.8pF |
Motorola |
| 23 |
MV1864B |
Silicon Epicap diode designed for electronic tuning and control applications in the UHF and lower microwave frequency 6.8pF |
Motorola |
| 24 |
MV1864D |
Silicon Epicap diode designed for electronic tuning and control applications in the UHF and lower microwave frequency 6.8pF |
Motorola |
| 25 |
MV2101 |
Voltage-Variable Capacitance Silicon EPICAP Diode, 30 Volts 6.8pF |
Motorola |
| 26 |
MV2104 |
Diode VAR Cap Single 30V 10.8pF 2-Pin TO-92 |
New Jersey Semiconductor |
| 27 |
SMV2101-01 |
Capacitance:6.8pF; VBR:30V min; 250mW; surface mount 2043 series hyperabrupt tuning diode |
Knox Semiconductor Inc |
| 28 |
SMV2101-08 |
Capacitance:6.8pF; VBR:30V min; 250mW; surface mount 2043 series hyperabrupt tuning diode |
Knox Semiconductor Inc |
| 29 |
SMV2101-15 |
Capacitance:6.8pF; VBR:30V min; 250mW; surface mount 2043 series hyperabrupt tuning diode |
Knox Semiconductor Inc |
| | | |
