| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1513-37.5Y |
Delay 37.5 +/-1.9 ns, fixed SIP delay line Td/Tr=5 |
Data Delay Devices Inc |
| 2 |
1514-37.5Y |
Delay 37.5 +/-1.9 ns, fixed SIP delay line Td/Tr=5 |
Data Delay Devices Inc |
| 3 |
1N3823 |
Zener regulator diode. Nom zener voltage 3.9 V. 1 W. |
Motorola |
| 4 |
1N4622UR-1 |
3.9 volt zener diode |
Compensated Devices Incorporated |
| 5 |
1N4730 |
3.9 V, 1 W silicon zener diode |
BKC International Electronics |
| 6 |
1N4730 |
1 W silicon zener diode. Nominal zener voltage 3.9 V. |
Fairchild Semiconductor |
| 7 |
1N4730 |
1 WATT, 3.9 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 8 |
1N4730A |
3.9 V, 1 W silicon zener diode |
BKC International Electronics |
| 9 |
1N4730A |
Voltage regulator diode. Working voltage (nom) 3.9 V . |
Philips |
| 10 |
1N5228 |
500 mW silicon zener diode. Nominal zener voltage 3.9 V. |
Fairchild Semiconductor |
| 11 |
1N5228 |
500mW, 3.9 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 12 |
1N5228A |
3.9 V, 20 mA, zener diode |
Leshan Radio Company |
| 13 |
1N5228AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 3.9 V. Tolerance +-10%. |
Microsemi |
| 14 |
1N5228BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 3.9 V. Tolerance +-5%. |
Microsemi |
| 15 |
1N5228C |
3.9 V, 20 mA, zener diode |
Leshan Radio Company |
| 16 |
1N5228D |
3.9 V, 20 mA, zener diode |
Leshan Radio Company |
| 17 |
1N5228UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 3.9 V. |
Microsemi |
| 18 |
1N5520A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 3.9 V. Test current 20 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 19 |
1N5520B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 3.9 V. Test current 20 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 20 |
1N5919 |
1.5 W, silicon zener diode. Zener voltage 5.6V. Test current 66.9 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 21 |
1N5919A |
1.5 W, silicon zener diode. Zener voltage 5.6V. Test current 66.9 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 22 |
1N5919C |
1.5 W, silicon zener diode. Zener voltage 5.6V. Test current 66.9 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 23 |
1N5919D |
1.5 W, silicon zener diode. Zener voltage 5.6V. Test current 66.9 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 24 |
1N5935 |
1.5 W, silicon zener diode. Zener voltage 27V. Test current 13.9 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 25 |
1N5935A |
1.5 W, silicon zener diode. Zener voltage 27V. Test current 13.9 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 26 |
1N5935C |
1.5 W, silicon zener diode. Zener voltage 27V. Test current 13.9 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 27 |
1N5935D |
1.5 W, silicon zener diode. Zener voltage 27V. Test current 13.9 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 28 |
1N5952 |
1.5 W, silicon zener diode. Zener voltage 130 V. Test current 2.9 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 29 |
1N5952A |
1.5 W, silicon zener diode. Zener voltage 130 V. Test current 2.9 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 30 |
1N5952C |
1.5 W, silicon zener diode. Zener voltage 130 V. Test current 2.9 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
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