| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N189 |
Photosensitive Device; RD=4,000 ohm, Sensitivity = 0.083%/fc |
Motorola |
| 2 |
1N746 |
500 mW silicon linear diode. Max zener impedance 28.0 Ohm, max zener voltage 3.3 V (Iz 20mA). |
Fairchild Semiconductor |
| 3 |
1N747 |
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA). |
Fairchild Semiconductor |
| 4 |
1N748 |
500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA). |
Fairchild Semiconductor |
| 5 |
1N749 |
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA). |
Fairchild Semiconductor |
| 6 |
1N750 |
500 mW silicon linear diode. Max zener impedance 19.0 Ohm, max zener voltage 4.7 V (Iz 20mA). |
Fairchild Semiconductor |
| 7 |
1N751 |
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA). |
Fairchild Semiconductor |
| 8 |
1N752 |
500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA). |
Fairchild Semiconductor |
| 9 |
1N753 |
500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA). |
Fairchild Semiconductor |
| 10 |
1N754 |
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA). |
Fairchild Semiconductor |
| 11 |
1N755 |
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA). |
Fairchild Semiconductor |
| 12 |
1N756 |
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA). |
Fairchild Semiconductor |
| 13 |
1N757 |
500 mW silicon linear diode. Max zener impedance 10.0 Ohm, max zener voltage 9.1 V (Iz 20mA). |
Fairchild Semiconductor |
| 14 |
1N758 |
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA). |
Fairchild Semiconductor |
| 15 |
1N759 |
500 mW silicon linear diode. Max zener impedance 30.0 Ohm, max zener voltage 12.0 V (Iz 20mA). |
Fairchild Semiconductor |
| 16 |
2N6796 |
8A, 100V, 0.180 Ohm, N-Channel Power MOSFET |
Fairchild Semiconductor |
| 17 |
2N7104 |
30 V, 70 ohm, N-channel enhancement-mode D-MOS FET switch |
Topaz Semiconductor |
| 18 |
2N7105 |
30 V, 70 ohm, N-channel enhancement-mode D-MOS FET switch |
Topaz Semiconductor |
| 19 |
2N7106 |
10 V, 70 ohm, N-channel enhancement-mode D-MOS FET switch |
Topaz Semiconductor |
| 20 |
2N7107 |
10 V, 70 ohm, N-channel enhancement-mode D-MOS FET switch |
Topaz Semiconductor |
| 21 |
2N7108 |
20 V, 70 ohm, N-channel enhancement-mode D-MOS FET switch |
Topaz Semiconductor |
| 22 |
2N7109 |
20 V, 70 ohm, N-channel enhancement-mode D-MOS FET switch |
Topaz Semiconductor |
| 23 |
5962-9314001HPA |
5962-9314001HPA · 90 V/1.0 Ohm, Hermetically Sealed, Power MOSFET Optocoupler |
Agilent (Hewlett-Packard) |
| 24 |
5962-9314001HPC |
5962-9314001HPC · 90 V/1.0 Ohm, Hermetically Sealed, Power MOSFET Optocoupler |
Agilent (Hewlett-Packard) |
| 25 |
5962-9314001HXA |
5962-9314001HXA · 90 V/1.0 Ohm, Hermetically Sealed, Power MOSFET Optocoupler |
Agilent (Hewlett-Packard) |
| 26 |
5962-9314001HYA |
5962-9314001HYA · 90 V/1.0 Ohm, Hermetically Sealed, Power MOSFET Optocoupler |
Agilent (Hewlett-Packard) |
| 27 |
5962-9314001HYC |
5962-9314001HYC · 90 V/1.0 Ohm, Hermetically Sealed, Power MOSFET Optocoupler |
Agilent (Hewlett-Packard) |
| 28 |
5962-9314001HZA |
5962-9314001HZA · 90 V/1.0 Ohm, Hermetically Sealed, Power MOSFET Optocoupler |
Agilent (Hewlett-Packard) |
| 29 |
5962-9314001HZC |
5962-9314001HZC · 90 V/1.0 Ohm, Hermetically Sealed, Power MOSFET Optocoupler |
Agilent (Hewlett-Packard) |
| 30 |
86205A |
86205A RF Bridge, 50 Ohm, 300 kHz to 6 GHz |
Agilent (Hewlett-Packard) |
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