No. |
Part Name |
Description |
Manufacturer |
1 |
DA28F016XS-25 |
16-Mbit (1 Mbit x 16,2 Mbit x 8) synchronous flash memory. Vcc=3.3, 50 pF load, 1.5V I/O levels |
Intel |
2 |
DD28F032SA-70 |
32-Mbit(2 Mbit x 16, 4 Mbit x 8) flashfile memory. Access speed 70 ns, Vcc = 5.0 V, 30 pF |
Intel |
3 |
DD28F032SA-80 |
32-Mbit(2 Mbit x 16, 4 Mbit x 8) flashfile memory. Access speed 80 ns, Vcc = 5.0 V, 100 pF |
Intel |
4 |
E28F016XD-95 |
16-Mbit (1 Mbit x 16) DRAM-interface flash memory. Vcc=3.3 V, 50 pF load, 1.5 V I/O levels |
Intel |
5 |
E28F016XS-25 |
16-Mbit (1 Mbit x 16,2 Mbit x 8) synchronous flash memory. Vcc=3.3, 50 pF load, 1.5V I/O levels |
Intel |
6 |
KC1850 |
C-values 220 pF - 0.01 µF, Voltage 63 - 160 VDC, Flat and linear TC, PCM 5 |
Vishay |
7 |
KP1830 |
C-values 100 pF - 0.033 µF, Voltage 63 - 630 VDC, High pulse load, Tolerances to 1%, Low losses, PCM 5 |
Vishay |
8 |
KP1836 |
C-values 100 pF - 0.22 µF, Voltage 630 - 2000 VDC, Very high current and pulse load, Low losses, PCM 15-37.5 |
Vishay |
9 |
MKI 1810 |
Box encapsulated capacitor for surface mounting , C-values 1000 pF-10 µF, 50 - 400 VDC, Code sizes 2220, 2824, 4036, 5045, 6560, Tape and Reel packaging |
Vishay |
10 |
MKP 1839 |
C-values 1000 pF - 10 µF, Voltage 160 - 630 VDC, Tolerances to 1%, Low losses, Low dielectric absorption, Low profile, AXIAL |
Vishay |
11 |
MKP 1840 |
C-values 4700 pF - 10 µF, Voltage 100 - 630 VDC, Low losses, Low dielectric absorption, PCM 5-37.5 |
Vishay |
12 |
MKP 1841 |
C-values 470 pF - 6.8 µF, Voltage 160 - 2000 VDC, Low losses, High current and pulse load, PCM 7.5-37.5 |
Vishay |
13 |
MKP 1841 -M |
C-values 470 pF - 4.7 µF, Voltage 250 - 2000 VDC, Low losses, High current and pulse load, Mini version, PCM 7.5-37.5 |
Vishay |
14 |
MKP 1845 |
C-values 1000 pF - 4.7 µF, Voltage 160 - 2000 VDC, Low losses, High current and pulse load, Low profile, AXIAL |
Vishay |
15 |
MKP 1846 |
C-values 1000 pF - 0.68 µF, Voltage 630 - 2000 VDC, Low losses, High current and pulse load, PCM 15-37.5 |
Vishay |
16 |
MKT 1804 |
Box encapsulated capacitor for surface mounting , C-values 1000 pF-10 µF, 50 - 400 VDC, Code sizes 2220, 2824, 4036, 5045, 6560, Tape and Reel packaging |
Vishay |
17 |
MKT 1813 |
C-values 470 pF - 22 µF, Voltage 63 - 1000 VDC, Low Profile, AXIAL |
Vishay |
18 |
MKT 1816 |
C-values 680 pF - 0.01 µF, Voltage 8000 - 15000 VDC, High voltage range, Low profile, AXIAL |
Vishay |
19 |
MKT 1817 |
C-values 1000 pF - 1.0 µF, Voltage 63 - 400 VDC, PCM5 |
Vishay |
20 |
MKT 1818 |
C-values 1000 pF - 4.7 µF, Voltage 40 - 250 VDC, PCM 7 |
Vishay |
21 |
MKT 1820 |
C-values 1000 pF - 15 µF, Voltage 63 - 1000 VDC, Max. temp. 125°C, PCM 10-27.5 |
Vishay |
22 |
MKT 1822 |
C-values 1000 pF - 15 µF, Voltage 63 - 1000 VDC, PCM 10-27.5 |
Vishay |
23 |
MKT 1826 |
C-values 1000 pF - 4.7 µF, Voltage 40 - 250 VDC, Max. temp. 125°C, High pulse load, Stacked film, PCM 5 |
Vishay |
24 |
MKT 1826-E |
C-values 1000 pF - 4.7 µF, Voltage 40 - 250 VDC, Max. temp. 125°C, High pulse load, Stacked Film, crimped to PCM 10 |
Vishay |
25 |
MMBV2101LT1-D |
Silicon Tuning Diodes 6.8 - 100 pF, 30 Volts Voltage Variable Capacitance Diodes |
ON Semiconductor |
26 |
PACSZ128403Q |
4.7 Kom/33 om, 150 pF, 5 V, IEEE 1284 parallel port ESD/EMI/termination network |
California Micro Devices Corp |
27 |
PACSZ128403QR |
4.7 Kom/33 om, 150 pF, 5 V, IEEE 1284 parallel port ESD/EMI/termination network |
California Micro Devices Corp |
28 |
PACZIG128402Q |
2.2 Kom/33om, 150 pF, IEEE 1284 parallel port ESD/EMI/termination network |
California Micro Devices Corp |
29 |
PACZIG128404Q |
4.7 Kom/33om, 150 pF, IEEE 1284 parallel port ESD/EMI/termination network |
California Micro Devices Corp |
30 |
PS7200A-1A |
4-PIN SOP 3.0 pF LOW OUTPUT CAPACITANCE 1-ch Optical Coupled MOS FET |
NEC |
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