| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N5400-G |
General Purpose Rectifier, VRRM=50V, VR=50V, IO=3A |
Comchip Technology |
| 2 |
1N5820-G |
Schottky Barrier Rectifiers Diodes, VRRM=20V, VR=20V, IO=3A |
Comchip Technology |
| 3 |
1SS400-G |
Small Signal Switching Diodes, VRRM=90V, VR=90V, PD=150mW, IF=100mA |
Comchip Technology |
| 4 |
2SA1980-G |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 5 |
2SC1600 |
NPN medium power microwave transistor (This datasheet of NE57510 is also the datasheet of 2SC1600-Grd D, see the Electrical Characteristics table) |
NEC |
| 6 |
2SD880-GR |
TO-220 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 7 |
6A10-G |
General Purpose Rectifier, VRRM=1000V, VR=1000V, IO=6A |
Comchip Technology |
| 8 |
ABS10-G |
Bridge Rectifiers, VRRM=1000V, VDC=1000V, I(AV)=0.8A |
Comchip Technology |
| 9 |
ACDST-70-G |
Switching Diodes Array, VRRM=70V, VR=70V, PD=225mW, IF=200mA |
Comchip Technology |
| 10 |
ADS54J20 |
Dual-Channel, 12-Bit, 1.0-GSPS Analog-to-Digital Converter 72-VQFN -40 to 85 |
Texas Instruments |
| 11 |
ADS54J20IRMP |
Dual-Channel, 12-Bit, 1.0-GSPS Analog-to-Digital Converter 72-VQFN -40 to 85 |
Texas Instruments |
| 12 |
ADS54J20IRMPT |
Dual-Channel, 12-Bit, 1.0-GSPS Analog-to-Digital Converter 72-VQFN -40 to 85 |
Texas Instruments |
| 13 |
ADS54J40 |
Dual-Channel, 14-Bit, 1.0-GSPS Analog-to-Digital Converter 72-VQFN -40 to 85 |
Texas Instruments |
| 14 |
ADS54J40IRMP |
Dual-Channel, 14-Bit, 1.0-GSPS Analog-to-Digital Converter 72-VQFN -40 to 85 |
Texas Instruments |
| 15 |
ADS54J40IRMPT |
Dual-Channel, 14-Bit, 1.0-GSPS Analog-to-Digital Converter 72-VQFN -40 to 85 |
Texas Instruments |
| 16 |
AT-41400-GP4 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip |
Agilent (Hewlett-Packard) |
| 17 |
AT-42000-GP4 |
Up to 6 GHz Medium Power Up to 6 GHz Medium Power |
Agilent (Hewlett-Packard) |
| 18 |
ATF-10100-GP3 |
0.5-12 GHz Low Noise Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 19 |
ATF-13100-GP3 |
2-18 GHz Low Noise Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 20 |
BA980-GS08 |
RF PIN Diode |
Vishay |
| 21 |
BC817-40-G |
General Purpose Transistor, VCBO=50V, VCEO=45V, VEBO=5V, IC=0.5A |
Comchip Technology |
| 22 |
BCM5632E |
12-Gigabit + One 10-Gigabit Switching Processor |
Broadcom |
| 23 |
BCM56501 |
4-Port 10-GbE/HiGig+™ Multilayer Switch |
Broadcom |
| 24 |
BCM56502 |
24-Port GbE Multilayer Switch with Two 10-GbE/HiGig+™ Ports |
Broadcom |
| 25 |
BCM56503 |
24-Port GbE Multilayer Switch with Three 10-GbE/HiGig+™ Ports |
Broadcom |
| 26 |
BCM56504 |
24-Port GbE Multilayer Switch with Four 10-GbE/HiGig+™ Ports |
Broadcom |
| 27 |
BCM5673 |
10-Gigabit Ethernet and HiGig™ Multilayer Switch |
Broadcom |
| 28 |
BCM5673 |
10-Gigabit Ethernet and HiGig™ Multilayer Switch |
Broadcom |
| 29 |
BCM5673 |
10-Gigabit Ethernet and HiGig™ Multilayer Switch |
Broadcom |
| 30 |
BCM5674 |
10-Gigabit Ethernet and HiGig™ Advanced Multilayer Switch |
Broadcom |
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