| No. |
Part Name |
Description |
Manufacturer |
| 1 |
AGM6448V-MC-FBD-T |
0.3-6.5V; number of dots: 640 x 480dots; dot size:0.09 x 0.31mm; dot pitch:0.11 x 0.33mm; AZ display |
AZ Displays |
| 2 |
AGM6448V-MC-FBS-T |
0.3-6.5V; number of dots: 640 x 480dots; dot size:0.09 x 0.31mm; dot pitch:0.11 x 0.33mm; AZ display |
AZ Displays |
| 3 |
AGM6448V-NC-FBD-T |
0.3-6.5V; number of dots: 640 x 480dots; dot size:0.09 x 0.31mm; dot pitch:0.11 x 0.33mm; AZ display |
AZ Displays |
| 4 |
AGM6448V-NC-FBS-T |
0.3-6.5V; number of dots: 640 x 480dots; dot size:0.09 x 0.31mm; dot pitch:0.11 x 0.33mm; AZ display |
AZ Displays |
| 5 |
ARM926EJ-S |
0.11 um Processor |
LSI Logic Corporation |
| 6 |
MTW23N25E |
TMOS POWER FET 23 AMPERES 250 VOLTS RDS(on) = 0.11 OHM |
Motorola |
| 7 |
NX8560LJ501-BC |
EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1550.11 nm. Frequency 193.40 THz. FC-UPC connector. |
NEC |
| 8 |
NX8560LJ501-CC |
EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1550.11 nm. Frequency 193.40 THz. SC-UPC connector. |
NEC |
| 9 |
NX8562LB501-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1550.11 nm. Frequency 193.40 THz. Anode ground. FC-PC connector. |
NEC |
| 10 |
NX8562LF501-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1550.11 nm. Frequency 193.40 THz. Anode floating. FC-PC connector. |
NEC |
| 11 |
NX8563LA501-CC |
Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 240 km (4320 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1550.11 nm. Frequency 193.40 THz. SC-UPC. |
NEC |
| 12 |
NX8563LA501-CD |
Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 240 km (4320 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1550.11 nm. Frequency 193.40 THz. SC-APC. |
NEC |
| 13 |
NX8563LAS501-CC |
Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 110 km (1800 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1550.11 nm. Frequency 193.40 THz. SC-UPC. |
NEC |
| 14 |
NX8563LAS501-CD |
Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 110 km (1800 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1550.11 nm. Frequency 193.40 THz. SC-APC. |
NEC |
| 15 |
NX8563LF501-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1550.11 nm. Frequency 193.40 THz. FC-PC connector. Anode floating. |
NEC |
| 16 |
NX8564LE501-BC |
EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 360 km DWDM applications. ITU-T wavelength 1550.11 nm. Frequency 193.40 THz. FC-UPC connector. |
NEC |
| 17 |
NX8564LE501-CC |
EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 360 km DWDM applications. ITU-T wavelength 1550.11 nm. Frequency 193.40 THz. SC-UPC connector. |
NEC |
| 18 |
NX8565LE501-BC |
EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1550.11 nm. Frequency 193.40 THz. FC-UPC connector. |
NEC |
| 19 |
NX8565LE501-CC |
EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1550.11 nm. Frequency 193.40 THz. SC-UPC connector. |
NEC |
| 20 |
NX8566LE501-BC |
EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1550.11 nm. Frequency 193.40 THz. FC-UPC connector. |
NEC |
| 21 |
NX8566LE501-CC |
EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1550.11 nm. Frequency 193.40 THz. SC-UPC connector. |
NEC |
| 22 |
STB16PF06L |
P-CHANNEL 60V - 0.11 Ohm - 16A D2PAK STripFET MOSFET |
ST Microelectronics |
| 23 |
STB16PF06LT4 |
P-CHANNEL 60V - 0.11 Ohm - 16A D2PAK STripFET MOSFET |
ST Microelectronics |
| 24 |
STE38NB50 |
N - CHANNEL 500V - 0.11 Ohm - 38A - ISOTOP PowerMESH MOSFET |
SGS Thomson Microelectronics |
| 25 |
STE38NB50F |
N - CHANNEL 500V - 0.11 Ohm - 38A - ISOTOP PowerMESH MOSFET |
SGS Thomson Microelectronics |
| 26 |
STE38NB50F |
N-CHANNEL 500V - 0.11 OHM - 38A - ISOTOP POWERMESH MOSFET |
ST Microelectronics |
| 27 |
STE45NK80ZD |
N-CHANNEL 800V - 0.11 OHM - 45A ISOTOP FAST DIODE SUPERFREDMESH MOSFET |
ST Microelectronics |
| 28 |
STL20NM20N |
N-CHANNEL 200V 0.11 OHM 20A POWERFLAT ULTRA LOW GATE CHARGE MDMESH II MOSFET |
ST Microelectronics |
| 29 |
STW29NK50ZD |
N-CHANNEL 500V - 0.11 OHM - 29A TO-247 FAST DIODE SUPERMESH MOSFET |
ST Microelectronics |
| 30 |
STY34NB50 |
N- CHANNEL 500 V - 0.11 OHM - 34 A - MAX247 POWERMESH MOSFET |
ST Microelectronics |
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