No. |
Part Name |
Description |
Manufacturer |
1 |
AGM3224W-MC-FBD-T |
0.3-7.0V; number of dots: 320 x 240dots; dot size:0.09 x 0.33mm; dot pitch:0.12 x 0.36mm; AZ display |
AZ Displays |
2 |
AGM3224W-MC-FBS-T |
0.3-7.0V; number of dots: 320 x 240dots; dot size:0.09 x 0.33mm; dot pitch:0.12 x 0.36mm; AZ display |
AZ Displays |
3 |
AGM3224W-NC-FBD-T |
0.3-7.0V; number of dots: 320 x 240dots; dot size:0.09 x 0.33mm; dot pitch:0.12 x 0.36mm; AZ display |
AZ Displays |
4 |
AGM3224W-NC-FBS-T |
0.3-7.0V; number of dots: 320 x 240dots; dot size:0.09 x 0.33mm; dot pitch:0.12 x 0.36mm; AZ display |
AZ Displays |
5 |
APL501P |
POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 500V 43.0A 0.12 OHM |
Advanced Power Technology |
6 |
APT5010JN |
POWER MOS IV 500V 48.0A 0.10 Ohm / 500V 43.0A 0.12 Ohm |
Advanced Power Technology |
7 |
APT5012JN |
POWER MOS IV 500V 48.0A 0.10 Ohm / 500V 43.0A 0.12 Ohm |
Advanced Power Technology |
8 |
BUZ350 |
Low Voltage MOSFETs - Power MOSFET, 200V, TO-220, RDSon=0.12 Ohm, 22A, NL |
Infineon |
9 |
BUZ36 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 22A 0.12 ohms |
Siliconix |
10 |
E2502H34 |
2.5 Gbits/s electroabsorption modulated isolated laser module (EM-ILM) for ultralong-reach applications. 600 km, standard fiber. ITU-T wavelength 1550.12 nm. Frequency 193.4 THz. |
Agere Systems |
11 |
FDH44N50 |
44A, 500V, 0.12 Ohm, N-Channel SMPS Power MOSFET |
Fairchild Semiconductor |
12 |
IRFD022 |
MOSPOWER N-Channel Enhancement Mode Transistor 50V 2.2A 0.12 ohms |
Siliconix |
13 |
MTD8N06E |
TMOS POWER FET 8.0 AMPERES 60 VOLTS RDS(on) = 0.12 OHM |
Motorola |
14 |
MTP15N06V |
TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.12 OHM |
Motorola |
15 |
MTP8N06 |
TMOS POWER FET 8.0 AMPERES 60 VOLTS RDS(on) = 0.12 OHM |
Motorola |
16 |
MTP8N06E |
TMOS POWER FET 8.0 AMPERES 60 VOLTS RDS(on) = 0.12 OHM |
Motorola |
17 |
NDL7911PC501 |
1550 nm optical fiber comm. EA modulator integrated MQW-DFB laser diode module for 2.5 Gb/s D-WDM ultralong-reach applications (360 km). With FC-PC connector. ITU-T wavelengh 1550.12 nm. Frequency 193.4 THz. |
NEC |
18 |
NDL7911PD501 |
1550 nm optical fiber comm. EA modulator integrated MQW-DFB laser diode module for 2.5 Gb/s D-WDM ultralong-reach applications (360 km). With SC-PC connector. ITU-T wavelengh 1550.12 nm. Frequency 193.4 THz. |
NEC |
19 |
NDL7912PC501 |
1550 nm optical fiber comm. EA modulator integrated MQW-DFB laser diode module for 2.5 Gb/s D-WDM ultralong-reach applications (600 km). With FC-PC connector. ITU-T wavelengh 1550.12 nm. Frequency 193.4 THz. |
NEC |
20 |
NDL7912PD501 |
1550 nm optical fiber comm. EA modulator integrated MQW-DFB laser diode module for 2.5 Gb/s D-WDM ultralong-reach applications (600 km). With SC-PC connector. ITU-T wavelengh 1550.12 nm. Frequency 193.4 THz. |
NEC |
21 |
STB25NM50N |
N-CHANNEL 550V @ TjMAX - 0.12 Ohm - 21.5 A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET |
ST Microelectronics |
22 |
STB25NM50N-1 |
N-CHANNEL 550V @ TjMAX - 0.12 Ohm - 21.5 A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET |
ST Microelectronics |
23 |
STB25NM50NT4 |
N-CHANNEL 550V @ TjMAX - 0.12 Ohm - 21.5 A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET |
ST Microelectronics |
24 |
STD12N10L |
N - CHANNEL 100V - 0.12 Ohms - 12A TO-252 LOW THRESHOLD POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
25 |
STF25NM50N |
N-CHANNEL 550V @ TjMAX - 0.12 Ohm - 21.5 A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET |
ST Microelectronics |
26 |
STN2NF06 |
N - CHANNEL 60V - 0.12 Ohms - 2A - SOT-223 STripFET POWER MOSFET |
SGS Thomson Microelectronics |
27 |
STN2NF06 |
N-CHANNEL 60V - 0.12 OMH - 2A SOT-223 STRIPFET MOSFET |
ST Microelectronics |
28 |
STP25NM50N |
N-CHANNEL 550V @ TjMAX - 0.12 Ohm - 21.5 A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET |
ST Microelectronics |
29 |
STW25NM50N |
N-CHANNEL 550V @ TjMAX - 0.12 Ohm - 21.5 A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET |
ST Microelectronics |
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