No. |
Part Name |
Description |
Manufacturer |
1 |
APT12067B2LL |
POWER MOS 7 1200V 18A 0.670 Ohm |
Advanced Power Technology |
2 |
APT12067JLL |
POWER MOS 7 1200V 17A 0.670 Ohm |
Advanced Power Technology |
3 |
APT12067LLL |
POWER MOS 7 1200V 18A 0.670 Ohm |
Advanced Power Technology |
4 |
APT8067HVR |
POWER MOS V 800V 11.5A 0.670 Ohm |
Advanced Power Technology |
5 |
CL8036 |
CW/Pulsed FET Oscillator operating in X-band 10.670 GHz |
Philips |
6 |
CL8066 |
C.W./Pulsed Doppler Module, centre frequency 10.670 GHz |
Philips |
7 |
FSL923A0D |
5A/ -200V/ 0.670 Ohm/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs |
Intersil |
8 |
FSL923A0D1 |
5A/ -200V/ 0.670 Ohm/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs |
Intersil |
9 |
FSL923A0D3 |
5A/ -200V/ 0.670 Ohm/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs |
Intersil |
10 |
FSL923A0R |
5A/ -200V/ 0.670 Ohm/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs |
Intersil |
11 |
FSL923A0R1 |
5A/ -200V/ 0.670 Ohm/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs |
Intersil |
12 |
FSL923A0R3 |
5A/ -200V/ 0.670 Ohm/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs |
Intersil |
13 |
FSL923A0R4 |
5A/ -200V/ 0.670 Ohm/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs |
Intersil |
14 |
HL6724MG |
The HL6724MG is a 0.67 ?m band AlGaInP laser diode with a multi-quantum well (MQW) structure. |
Hitachi Semiconductor |
15 |
J503 |
Diode Current Reg. 50V 0.672mA 2-Pin TO-92 |
New Jersey Semiconductor |
16 |
PSMNR58-30YLH |
N-channel 30 V, 0.67 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology |
Nexperia |
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