| No. |
Part Name |
Description |
Manufacturer |
| 1 |
APT12067B2LL |
POWER MOS 7 1200V 18A 0.670 Ohm |
Advanced Power Technology |
| 2 |
APT12067JLL |
POWER MOS 7 1200V 17A 0.670 Ohm |
Advanced Power Technology |
| 3 |
APT12067LLL |
POWER MOS 7 1200V 18A 0.670 Ohm |
Advanced Power Technology |
| 4 |
APT8067HVR |
POWER MOS V 800V 11.5A 0.670 Ohm |
Advanced Power Technology |
| 5 |
CL8036 |
CW/Pulsed FET Oscillator operating in X-band 10.670 GHz |
Philips |
| 6 |
CL8066 |
C.W./Pulsed Doppler Module, centre frequency 10.670 GHz |
Philips |
| 7 |
FSL923A0D |
5A/ -200V/ 0.670 Ohm/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs |
Intersil |
| 8 |
FSL923A0D1 |
5A/ -200V/ 0.670 Ohm/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs |
Intersil |
| 9 |
FSL923A0D3 |
5A/ -200V/ 0.670 Ohm/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs |
Intersil |
| 10 |
FSL923A0R |
5A/ -200V/ 0.670 Ohm/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs |
Intersil |
| 11 |
FSL923A0R1 |
5A/ -200V/ 0.670 Ohm/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs |
Intersil |
| 12 |
FSL923A0R3 |
5A/ -200V/ 0.670 Ohm/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs |
Intersil |
| 13 |
FSL923A0R4 |
5A/ -200V/ 0.670 Ohm/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs |
Intersil |
| | | |
