| No. |
Part Name |
Description |
Manufacturer |
| 1 |
EN3240 |
Schottky Barrier Diode, 5V, 30mA, 0.69pF, Dual CP |
ON Semiconductor |
| 2 |
HDSP-S80E |
HDSP-S80E · 17.5 mm (0.69 inch) General Purpose 8x8 Dot Matrix Alphanumeric Displays |
Agilent (Hewlett-Packard) |
| 3 |
HDSP-S80G |
HDSP-S80G · 17.5 mm (0.69 inch) General Purpose 8x8 Dot Matrix Alphanumeric Displays |
Agilent (Hewlett-Packard) |
| 4 |
HDSP-S85E |
HDSP-S85E · 17.5 mm (0.69 inch) General Purpose 8x8 Dot Matrix Alphanumeric Displays |
Agilent (Hewlett-Packard) |
| 5 |
HDSP-S85G |
HDSP-S85G · 17.5 mm (0.69 inch) General Purpose 8x8 Dot Matrix Alphanumeric Displays |
Agilent (Hewlett-Packard) |
| 6 |
STW10NB60 |
N - CHANNEL 600V - 0.69Ohm - 10A - TO-247 PowerMESH MOSFET |
SGS Thomson Microelectronics |
| 7 |
STW10NB60 |
N-CHANNEL 600V - 0.69 OHM - 10A - TO-247 POWERMESH MOSFET |
ST Microelectronics |
| 8 |
VTS2082 |
Process photodiode. Isc = 0.69 mA(typ), Voc = 0.45 mV(typ) at H = 1000 lux, 2850 K. |
PerkinElmer Optoelectronics |
| 9 |
VTS3082 |
Process photodiode. Isc = 0.69 mA(typ), Voc = 0.45 mV(typ) at H = 1000 lux, 2850 K. |
PerkinElmer Optoelectronics |
| 10 |
VTS3182 |
Process photodiode. Isc = 0.69 mA(typ), Voc = 0.45 mV(typ) at H = 1000 lux, 2850 K. |
PerkinElmer Optoelectronics |
| | | |
