No. |
Part Name |
Description |
Manufacturer |
1 |
1N990 |
0.5W, silicon zener diode. Zener voltage 160V. Test current 0.80mA. +-20% tolerance. |
Jinan Gude Electronic Device |
2 |
1N990A |
0.5W, silicon zener diode. Zener voltage 160V. Test current 0.80mA. +-10% tolerance. |
Jinan Gude Electronic Device |
3 |
2N1613 |
0.800W General Purpose NPN Metal Can Transistor. 50V Vceo, 0.500A Ic, 20 hFE. |
Continental Device India Limited |
4 |
2N1711 |
0.800W General Purpose NPN Metal Can Transistor. 50V Vceo, 1.000A Ic, 40 hFE. |
Continental Device India Limited |
5 |
2N1893 |
0.800W General Purpose NPN Metal Can Transistor. 80V Vceo, 0.500A Ic, 20 hFE. |
Continental Device India Limited |
6 |
2N2218 |
0.800W General Purpose NPN Metal Can Transistor. 30V Vceo, 0.800A Ic, 20 hFE. |
Continental Device India Limited |
7 |
2N2218 |
0.800W General Purpose NPN Metal Can Transistor. 30V Vceo, 0.800A Ic, 20 hFE. |
Continental Device India Limited |
8 |
2N2218A |
0.800W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.800A Ic, 20 hFE. |
Continental Device India Limited |
9 |
2N2218A |
0.800W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.800A Ic, 20 hFE. |
Continental Device India Limited |
10 |
2N2219 |
0.800W General Purpose NPN Metal Can Transistor. 30V Vceo, 0.800A Ic, 35 hFE. |
Continental Device India Limited |
11 |
2N2219 |
0.800W General Purpose NPN Metal Can Transistor. 30V Vceo, 0.800A Ic, 35 hFE. |
Continental Device India Limited |
12 |
2N2219A |
0.800W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.800A Ic, 35 hFE. |
Continental Device India Limited |
13 |
2N2219A |
0.800W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.800A Ic, 35 hFE. |
Continental Device India Limited |
14 |
2N2221 |
0.500W General Purpose NPN Metal Can Transistor. 30V Vceo, 0.800A Ic, 20 hFE. |
Continental Device India Limited |
15 |
2N2221A |
0.500W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.800A Ic, 25 hFE. |
Continental Device India Limited |
16 |
2N2222 |
0.500W General Purpose NPN Metal Can Transistor. 30V Vceo, 0.800A Ic, 30 hFE. |
Continental Device India Limited |
17 |
2N2222A |
0.500W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.800A Ic, 40 hFE. |
Continental Device India Limited |
18 |
2N3019 |
0.800W General Purpose NPN Metal Can Transistor. 80V Vceo, A Ic, 50 hFE. |
Continental Device India Limited |
19 |
2N3020 |
0.800W General Purpose NPN Metal Can Transistor. 80V Vceo, A Ic, 30 - 100 hFE. |
Continental Device India Limited |
20 |
2N3715 |
10 AMPERE POWER TRANSISTORS SILICON NPN 60.80 VOLTS 150 WATTS |
Motorola |
21 |
2N3716 |
10 AMPERE POWER TRANSISTORS SILICON NPN 60.80 VOLTS 150 WATTS |
Motorola |
22 |
2N4030 |
0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 40 - 120 hFE. |
Continental Device India Limited |
23 |
2N4031 |
0.800W RF PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 40 - 120 hFE. |
Continental Device India Limited |
24 |
2N4032 |
0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 100 - 300 hFE. |
Continental Device India Limited |
25 |
2N4033 |
0.800W RF PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 100 - 300 hFE. |
Continental Device India Limited |
26 |
2N6790 |
3.5A/ 200V/ 0.800 Ohm/ N-Channel Power |
Fairchild Semiconductor |
27 |
2N699 |
0.800W General Purpose NPN Metal Can Transistor. 80V Vceo, 0.500A Ic, 40 - 120 hFE. |
Continental Device India Limited |
28 |
APT12080JVR |
POWER MOS V 1200V 15A 0.800 Ohm |
Advanced Power Technology |
29 |
APT12080LVR |
POWER MOS V 1200V 16A 0.800 Ohm |
Advanced Power Technology |
30 |
AV101-12 |
HIP3 Variable Attenuator 0.80�1.00 GHz |
Alpha Industries Inc |
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