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Datasheets for 0000

Datasheets found :: 215
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No. Part Name Description Manufacturer
1 1N5184 10000 V, 0.1 A standard recovery rectifier Solid State Devices Inc
2 ADA10000 The ADA10000 is a monolithic IC intended for use in applications requiring high linearity such as: Cellular Telephone Base Station ... Anadigics Inc
3 ADCH-80 RF Choke 50 MHz to 10000 MHz Mini-Circuits
4 C11 HMPM50000 Case Outline IPRS Baneasa
5 C1372 Channel photomultiplexer, 1/2 inche, window material quartz., dark current 20000 pA. PerkinElmer Optoelectronics
6 C1373 Channel photomultiplexer, 1/2 inche, window material UV glass., dark current 20000 pA. PerkinElmer Optoelectronics
7 C1962 Channel photomultiplexer, 3/4 inche, window material quartz., dark current 10000 pA. PerkinElmer Optoelectronics
8 C1963 Channel photomultiplexer, 3/4 inche, window material UV glass., dark current 10000 pA. PerkinElmer Optoelectronics
9 C1972 Channel photomultiplexer, 3/4 inche, window material quartz., dark current 50000 pA. PerkinElmer Optoelectronics
10 C1973 Channel photomultiplexer, 3/4 inche, window material UV glass., dark current 50000 pA. PerkinElmer Optoelectronics
11 CDD1933 30.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 1000 - 10000 hFE. Continental Device India Limited
12 CFB949 2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275 Continental Device India Limited
13 CFB949A 2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275A Continental Device India Limited
14 CFB949AP 2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275AP Continental Device India Limited
15 CFB949P 2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275P Continental Device India Limited
16 CFD1025 35.000W Darlington NPN Plastic Leaded Transistor. 150V Vceo, 8.000A Ic, 1500 - 30000 hFE. Continental Device India Limited
17 CFD1275 2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFB949 Continental Device India Limited
18 CFD1275A 2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFB949A Continental Device India Limited
19 CFD1275AP 2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFB949AP Continental Device India Limited
20 CFD1275P 2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFB949P Continental Device India Limited
21 CFD1933 30.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 1000 - 10000 hFE. Continental Device India Limited
22 CN1016 60.000W General Purpose NPN Metal Can Transistor. 150V Vceo, 10.000A Ic, 2000 - 20000 hFE. Continental Device India Limited
23 CN1933 2.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 1000 - 10000 hFE. Continental Device India Limited
24 CP1016 60.000W General Purpose PNP Metal Can Transistor. 150V Vceo, 10.000A Ic, 2000 - 20000 hFE. Continental Device India Limited
25 CP107 60.000W Medium Power PNP Plastic Leaded Transistor. 130V Vceo, 10.000A Ic, 2000 - 20000 hFE. Continental Device India Limited
26 CP1342 2.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 1000 - 10000 hFE. Continental Device India Limited
27 CSB1272 10.000W Medium Power PNP Plastic Leaded Transistor. 100V Vceo, 2.000A Ic, 1000 - 10000 hFE. Continental Device India Limited
28 CSB1626 30.000W Medium Power PNP Plastic Leaded Transistor. 110V Vceo, 6.000A Ic, 5000 - 30000 hFE. Continental Device India Limited
29 CSB612 2.000W Medium Power PNP Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 2000 - 20000 hFE. Continental Device India Limited
30 CSB810 2.000W Medium Power PNP Plastic Leaded Transistor. 110V Vceo, 8.000A Ic, 1000 - 20000 hFE. Continental Device India Limited


Datasheets found :: 215
Page: | 1 | 2 | 3 | 4 | 5 |



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