| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1000A |
Ultra Precision Reference |
Linear Technology |
| 2 |
1N3000A |
Zener Voltage Regulator Diode |
Microsemi |
| 3 |
1N3000A |
Zener Diode 62V 10W |
Motorola |
| 4 |
1N3000A |
Diode Zener Single 62V 10% 10W 2-Pin DO-4 |
New Jersey Semiconductor |
| 5 |
1N3000A |
10 Watt Silicon Zener Diode 62V, tolerance ±10% |
Transitron Electronic |
| 6 |
1N3000AR |
10 Watt Silicon Zener Diode 62V Reverse Polarity, tolerance ±10% |
Transitron Electronic |
| 7 |
1N4000A |
Zener Voltage Regulator Diode |
Microsemi |
| 8 |
1N4000A |
10W Low-voltage, alloy-junction zener diode with cathode connected to case 7.5V |
Motorola |
| 9 |
1N4000A |
Zener Diode 7.5V 10W |
Motorola |
| 10 |
1N4000A |
Diode Zener Single 7.5V 10% 10W 2-Pin DO-4 |
New Jersey Semiconductor |
| 11 |
1N6000A |
Zener Voltage Regulator Diode |
Microsemi |
| 12 |
1N6000A |
Diode Zener Single 10V 10% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 13 |
1N6000AUR-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 14 |
1N6000AUR-1E3 |
Zener Voltage Regulator Diode |
Microsemi |
| 15 |
2N1711 |
0.800W General Purpose NPN Metal Can Transistor. 50V Vceo, 1.000A Ic, 40 hFE. |
Continental Device India Limited |
| 16 |
2N2102 |
1.000W RF NPN Metal Can Transistor. 65V Vceo, 1.000A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 17 |
2N2270 |
1.000W General Purpose NPN Metal Can Transistor. 45V Vceo, 1.000A Ic, 50 - 200 hFE. |
Continental Device India Limited |
| 18 |
2N23867 |
1.000W Power PNP Metal Can Transistor. 40V Vceo, 3.000A Ic, 40 - 200 hFE. |
Continental Device India Limited |
| 19 |
2N2896 |
1.800W General Purpose NPN Metal Can Transistor. 90V Vceo, 1.000A Ic, 35 hFE. |
Continental Device India Limited |
| 20 |
2N3055 |
115.000W Power NPN Metal Can Transistor. 60V Vceo, 15.000A Ic, 5 hFE. |
Continental Device India Limited |
| 21 |
2N3055HV |
90.000W Power NPN Metal Can Transistor. 100V Vceo, 15.000A Ic, 5 hFE. |
Continental Device India Limited |
| 22 |
2N3439 |
1.000W General Purpose NPN Metal Can Transistor. 350V Vceo, 1.000A Ic, 40 - 160 hFE. |
Continental Device India Limited |
| 23 |
2N3440 |
1.000W High Voltage NPN Metal Can Transistor. 250V Vceo, 1.000A Ic, 40 - 160 hFE. |
Continental Device India Limited |
| 24 |
2N3635 |
1.000W RF PNP Metal Can Transistor. 140V Vceo, 1.000A Ic, 80 hFE. |
Continental Device India Limited |
| 25 |
2N3636 |
1.000W RF PNP Metal Can Transistor. 175V Vceo, 1.000A Ic, 40 hFE. |
Continental Device India Limited |
| 26 |
2N3637 |
1.000W RF PNP Metal Can Transistor. 175V Vceo, 1.000A Ic, 80 hFE. |
Continental Device India Limited |
| 27 |
2N3700 |
0.500W General Purpose NPN Metal Can Transistor. 80V Vceo, 1.000A Ic, 100 - 300 hFE. |
Continental Device India Limited |
| 28 |
2N3724 |
1.000W Switching NPN Metal Can Transistor. 30V Vceo, 1.000A Ic, 60 - 150 hFE. |
Continental Device India Limited |
| 29 |
2N3725 |
1.000W Switching NPN Metal Can Transistor. 50V Vceo, 1.000A Ic, 60 - 150 hFE. |
Continental Device India Limited |
| 30 |
2N3772 |
150.000W Power NPN Metal Can Transistor. 60V Vceo, 20.000A Ic, 15 - 60 hFE. |
Continental Device India Limited |
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